參數(shù)資料
型號(hào): HYB514400BTL-80
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM
中文描述: 1M X 4 FAST PAGE DRAM, 80 ns, PDSO20
文件頁數(shù): 8/24頁
文件大小: 124K
代理商: HYB514400BTL-80
HYB 514400BJ-50/-60
1M
×
4 DRAM
Semiconductor Group
8
1998-10-01
Access time from CAS precharge
t
CPA
t
RAS
t
RHCP
30
35
ns
7
RAS pulse width
50
200k
60
200k
ns
CAS precharge to RAS delay
30
35
ns
Fast Page Mode Read-Modify-Write Cycle
Fast page mode read-write cycle time
t
PRWC
t
CPWD
71
80
ns
CAS precharge to WE
48
55
ns
CAS-before-RAS Refresh Cycle
CAS setup time
t
CSR
t
CHR
t
RPC
t
WRP
t
WRH
10
10
ns
CAS hold time
10
10
ns
RAS to CAS precharge time
5
5
ns
Write to RAS precharge time
10
10
ns
Write hold time referenced to RAS
10
10
ns
CAS-before-RAS Counter Test Cycle
CAS precharge time
t
CPT
35
40
ns
Test Mode
Write command setup time
t
WTS
t
WTH
10
10
ns
Write command hold time
10
10
ns
AC Characteristics
(cont’d)
5, 6
T
A
= 0 to 70
°
C,
V
CC
= 5 V
±
10 %,
t
T
= 5 ns
Parameter
Symbol
Limit Values
Unit
Note
-50
-60
min. max. min. max.
相關(guān)PDF資料
PDF描述
HYB514400BJL-50 1M x 4-BIT DYNAMIC RAM LOW POWER 1M x 4-BIT DYNAMIC RAM
HYB514400BJL-60 1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM
HYB514400BJL-70 1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM
HYB18L128160BF-75 ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
HYB18L128160BC-7.5 BJAWBMSpecialty DRAMs Mobile-RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB514400J-10 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM
HYB514400J-80 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM
HYB514405BJ 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM
HYB514405BJ-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM
HYB514405BJ-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM