參數(shù)資料
型號(hào): HYB514400BT-80
廠商: SIEMENS A G
元件分類: DRAM
英文描述: RP12 (A) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 48V; Output Voltage (Vdc): 5V; 2:1 Wide Input Voltage Range; 12 Watts Output Power; 1.6kVDC Isolation; UL Certified; Over Current Protection; Five-Sided Shield; Standard DIP24 and SMD-Pinning; Efficiency to 88%
中文描述: 1M X 4 FAST PAGE DRAM, 80 ns, PDSO20
文件頁(yè)數(shù): 5/24頁(yè)
文件大?。?/td> 124K
代理商: HYB514400BT-80
HYB 514400BJ-50/-60
1M
×
4 DRAM
Semiconductor Group
5
1998-10-01
Absolute Maximum Ratings
Operating temperature range ........................................................................................... 0 to 70
°
C
Storage temperature range.................................................................................... – 55 to + 150
°
C
Input/output voltage ....................................................................................................... – 1 to + 7 V
Power Supply voltage.................................................................................................... – 1 to + 7 V
Data out current (short circuit) ............................................................................................... 50 mA
Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
DC Characteristics
T
A
= 0 to 70
°
C,
V
SS
= 0 V,
V
CC
= 5 V
±
10 %,
t
T
= 5 ns
Parameter
Symbol
Limit Values
Unit Test
Condition
min.
max.
V
CC
+ 0.5 V
0.8
Input high voltage
V
IH
V
IL
V
OH
V
OL
I
I(L)
2.4
1
Input low voltage
Output high voltage (
I
OUT
= – 5 mA)
Output low voltage (
I
OUT
= 4.2 mA)
Input leakage current, any input
(0 V <
V
IN
< 7, all other input = 0 V)
Output leakage current
(DO is disabled, 0 <
V
OUT
<
V
CC
)
Average
V
CC
supply current
– 1.0
V
1
2.4
V
1
0.4
V
μ
A
1
– 10
10
1
I
O(L)
– 10
10
μ
A
1
-50 version
-60 version
I
CC1
120
110
mA
2, 3, 4
Standby
V
CC
supply current
(RAS = CAS = WE =
V
IH
)
Average
V
CC
supply current during RAS-only
refresh cycles
I
CC2
2
mA
-50 version
-60 version
I
CC3
120
110
mA
2, 4
Average
V
CC
supply current during fast page
mode operation
-50 version
-60 version
I
CC4
80
70
mA
2, 3, 4
Standby
V
CC
supply current
(RAS = CAS = WE =
V
CC
– 0.2 V)
Average
V
CC
supply current during
CAS-before-RAS refresh mode
I
CC5
1
mA
1
-50 version
-60 version
I
CC6
120
110
mA
2, 4
相關(guān)PDF資料
PDF描述
HYB514400BJ 1M x 4-BIT DYNAMIC RAM LOW POWER 1M x 4-BIT DYNAMIC RAM
HYB514400BJ-50- RES 12K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 5K/REEL-7IN-PA
HYB514400BJ-60 1M x 4-Bit Dynamic RAM
HYB514400BJ-BT60 RES 121-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 5K/REEL-7IN-PA
HYB514400BJL-80 1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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HYB514400BTL-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM
HYB514400BTL-70 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM
HYB514400BTL-80 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM
HYB514400J-10 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM