- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370744 > HYB514400BJ-50 (SIEMENS A G) Connector Cover; Leaded Process Compatible:No; Enclosure Color:Gray; For Use With:SB 120 Connector; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes PDF資料下載
參數(shù)資料
| 型號： | HYB514400BJ-50 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | Connector Cover; Leaded Process Compatible:No; Enclosure Color:Gray; For Use With:SB 120 Connector; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes |
| 中文描述： | 1M X 4 FAST PAGE DRAM, 50 ns, PDSO20 |
| 封裝： | 0.300 INCH, PLASTIC, SOJ-26 |
| 文件頁數(shù)： | 2/24頁 |
| 文件大?。?/td> | 124K |
| 代理商： | HYB514400BJ-50 |
HYB 514400BJ-50/-60
1M
×
4 DRAM
Semiconductor Group
2
1998-10-01
The HYB 514400BJ/BJL is the new generation dynamic RAM organized as 1 048 576 words by
4-bit. The HYB 514400BJ/BJL utilizes CMOS silicon gate process as well as advances circuit
techniques to provide wide operation margins, both internally and for the system user. Multiplexed
address inputs permit the HYB 514400BJ/BJL to be packed in a standard plastic P-SOJ-26/20
package. This package size provides high system bit densities and is compatible with commonly
used automatic testing and insertion equipment. System oriented features include single + 5 V
(
±
10 %) power supply, direct interfacing with high performance logic device families such as
Schottky TTL.
Ordering Information
Type
Ordering Code
Package
Descriptions
HYB 514400BJ-50
Q67100-Q973
P-SOJ-26/20-2 300 mil
DRAM (access time 50 ns)
HYB 514400BJ-60
Q67100-Q756
P-SOJ-26/20-2 300 mil
DRAM (access time 60 ns)
相關PDF資料 |
PDF描述 |
|---|---|
| HYB514400BJ-80 | 1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM |
| HYB514400BT-60 | 1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM |
| HYB514400BT-70 | RP12 (A) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 24V; Output Voltage (Vdc): 3.3V; 2:1 Wide Input Voltage Range; 12 Watts Output Power; 1.6kVDC Isolation; UL Certified; Over Current Protection; Five-Sided Shield; Standard DIP24 and SMD-Pinning; Efficiency to 88% |
| HYB 514400BJ-60 | 4M × 1-Bit Dynamic RAM(4M × 1位動態(tài)RAM) |
| HYB514400BJ-70 | 1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HYB514400BJ-50- | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM |
| HYB514400BJ-60 | 制造商:Siemens 功能描述:Dynamic RAM, Fast Page, 1M x 4, 26 Pin, Plastic, SOJ |
| HYB514400BJ-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-BIT DYNAMIC RAM LOW POWER 1M x 4-BIT DYNAMIC RAM |
| HYB514400BJ-80 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM |
| HYB514400BJ-BT60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM |
發(fā)布緊急采購，3分鐘左右您將得到回復。