參數(shù)資料
型號: HYB5116160BSJ-60
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 1M x 16-Bit Dynamic RAM
中文描述: 1M X 16 FAST PAGE DRAM, 60 ns, PDSO42
文件頁數(shù): 8/24頁
文件大小: 272K
代理商: HYB5116160BSJ-60
Semiconductor Group
8
HYB 5116160BSJ-50/-60/-70
1M x 16-DRAM
Output buffer turn-off delay from
OE
t
OEZ
0
13
0
15
0
20
ns
12
Data to OE low delay
t
DZO
t
CDD
t
ODD
0
0
0
ns
13
CAS high to data delay
13
15
20
ns
14
OE high to data delay
13
15
20
ns
14
Write Cycle
Write command hold time
t
WCH
t
WP
t
WCS
8
10
10
ns
Write command pulse width
8
10
10
ns
Write command setup time
0
0
0
ns
15
Write command to RAS lead time
t
RWL
Write command to CAS lead time
t
CWL
Data setup time
13
15
20
ns
13
15
20
ns
t
DS
t
DH
t
DZC
0
0
0
ns
16
Data hold time
10
10
15
ns
16
Data to CAS low delay
0
0
0
ns
13
Read-Modify-Write Cycle
Read-write cycle time
t
RWC
t
RWD
t
CWD
126
150
180
ns
RAS to WE delay time
68
80
95
ns
15
CAS to WE delay time
31
35
45
ns
15
Column address to WE delay time
t
AWD
OE command hold time
43
50
60
ns
15
t
OEH
13
15
20
ns
Fast Page Mode Cycle
Fast page mode cycle time
t
PC
t
CP
t
CPA
t
RAS
t
RHPC
35
40
45
ns
CAS precharge time
10
10
10
ns
Access time from CAS precharge
30
35
40
ns
7
RAS pulse width
50
200k
60
200k 70
200k
ns
CAS precharge to RAS Delay
30
35
40
ns
AC Characteristics
(cont’d)
5)6)
16F
T
A
= 0 to 70 °C,
V
CC
= 5 V
±
10 %,
t
T
= 5 ns
Parameter
Symbol
Limit Values
Unit
Note
-50
-60
-70
min.
max. min.
max. min.
max.
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