參數(shù)資料
型號(hào): HYB5116160BSJ-50
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 1M x 16-Bit Dynamic RAM
中文描述: 1M X 16 FAST PAGE DRAM, 50 ns, PDSO42
文件頁(yè)數(shù): 6/24頁(yè)
文件大?。?/td> 272K
代理商: HYB5116160BSJ-50
Semiconductor Group
6
HYB 5116160BSJ-50/-60/-70
1M x 16-DRAM
Average
V
CC
supply current,
during fast page mode:
-50 ns version
-60 ns version
-70 ns version
(RAS =
V
IL
, CAS, address cycling,
t
PC
=
t
PC
min.
)
Standby
V
CC
supply current
(RAS = CAS =
V
CC
– 0.2 V)
Average
V
CC
supply current, during CAS-
before-RAS refresh mode: -50 ns version
I
CC4
40
35
30
mA
mA
mA
2) 3) 4)
2) 3) 4)
2) 3) 4)
I
CC5
1
mA
1)
-60 ns version
-70 ns version
(RAS, CAS cycling,
t
RC
=
t
RC
min.)
Average Self Refresh Current
I
CC6
100
90
80
mA
mA
mA
2) 4)
2) 4)
2) 4)
(CBR cycle with tRAS>TRASSmin., CAS held low,
WE=Vcc-0.2V, Address and Din=Vcc-0.2V or 0.2V)
I
CC7
_
1
mA
Capacitance
T
A
= 0 to 70 °C,
V
CC
= 5 V
±
10 %,
f
= 1 MHz
Parameter
Symbol
Limit Values
Unit
min.
max.
Input capacitance (A0 to A11)
C
I1
C
I2
C
IO
5
pF
Input capacitance (RAS, UCAS, LCAS, WE, OE)
7
pF
I/O capacitance (I/O1-I/O16)
7
pF
DC Characteristics
(cont’d)
T
A
= 0 to 70 °C,
V
SS
= 0 V,
V
CC
= 5 V
±
10 %,
t
T
= 5 ns
Parameter
Symbol
Limit Values
Unit Test
Condition
min.
max.
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