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參數(shù)資料
| 型號(hào)： | HYB39S256800TTL-7F |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | MEMORY SPECTRUM |
| 中文描述： | 記憶譜 |
| 文件頁數(shù)： | 8/22頁 |
| 文件大小： | 564K |
| 代理商： | HYB39S256800TTL-7F |
INFINEON Technologies
16
2002-04-23
HYB39S256400/800/160DT(L)/DC(L)
256MBit Synchronous DRAM
Absolute Maximum Ratings
Recommended Operation Conditions and DC Eletrical Characteristics
TA =0to 70
oC;
Parameter
Symbol
Limit Values
Unit
min.
max.
Input / Output voltage relative to VSS
VIN, VOUT
–1.0
4.6
V
Power supply voltage
VDD,VDDQ
–1.0
4.6
V
Operating Temperature
TA
0+70
oC
Storage temperature range
TSTG
-55
+150
oC
Power dissipation per SDRAM component
PD
–1
W
Data out current (short circuit)
IOS
–50
mA
Permanent device damage may occur if “Absolute Maximum Ratings” are exceeded.
Functional operation should be restricted to recommended operation conditions.
Exposure to higher than recommended voltage for extended periods of time affect device reliability
Parameter
Symbol
Limit Values
Unit Notes
min.
typ.
max.
Supply Voltage
VDD,VDDQ
3.0
3.3
3.6
V
1
Input high voltage
V
IH
2.0
3.0
VDDQ+0.3
V
1, 2
Input low voltage
V
IL
– 0.3
0
0.8
V
1, 2
Output high voltage (IOUT =– 4.0 mA) VOH
2.4
–
V
1
Output low voltage (IOUT =4.0 mA)
V
OL
––
0.4
V
1
Input leakage current, any input
(0 V <
VIN < VDD, all other inputs = 0 V)
I
IL
–5
–
5
mA
Output leakage current
(DQs are disabled, 0 V <
VOUT < VDDQ)
I
OL
–5
–
5
mA
Notes:
1. All voltages are referenced to VSS.
2. Vih may overshoot to VDDQ + 2.0 V for pulse width of < 4ns with 3.3V. Vil may undershoot to -2.0 V for pulse
width < 4.0 ns with 3.3V. Pulse width measured at 50% points with amplitude
measured peak to DC
reference.
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