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參數(shù)資料
| 型號： | HYB39S256160TCL-7F |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | surface mount silicon Zener diodes |
| 中文描述： | 表面貼裝硅穩(wěn)壓二極管 |
| 文件頁數(shù)： | 7/22頁 |
| 文件大小： | 564K |
| 代理商： | HYB39S256160TCL-7F |
INFINEON Technologies
15
2002-04-23
HYB39S256400/800/160DT(L)/DC(L)
256MBit Synchronous DRAM
Bank Selection by Address Bits
Burst Termination
Once a burst read or write operation has been initiated, there are several methods in which to
terminate the burst operation prematurely. These methods include using another Read or Write
Command to interrupt an existing burst operation, use a Precharge Command to interrupt a burst
cycle and close the active bank, or using the Burst Stop Command to terminate the existing burst
operation but leave the bank open for future Read or Write Commands to the same page of the
active bank. When interrupting a burst with another Read or Write Command care must be taken to
avoid DQ contention. The Burst Stop Command, however, has the fewest restrictions making it the
easiest method to use when terminating a burst operation before it has been completed. If a Burst
Stop command is issued during a burst write operation, then any residual data from the burst write
cycle will be ignored. Data that is presented on the DQ pins before the Burst Stop Command is
registered will be written to the memory.
Capacitance
T
A =0 to 70
°C; V
DD,VDDQ =3.3 V
± 0.3 V, f =1 MHz
A10
BA0
BA1
0
Bank 0
0
1
Bank 1
0
1
0
Bank 2
0
1
Bank 3
1x
x
all Banks
Parameter
Symbol
Values
Unit
min.
max.
Input capacitance (CLK)
C
I1
2.5
3.5
pF
Input capacitance
(A0-A12, BA0,BA1,RAS,CAS,WE,CS,CKE,DQM)
C
I2
2.5
3.8
pF
Input / Output capacitance (DQ)
C
IO
4.0
6.0
pF
Note: Capacitance values are shown for TSOP-54 packages. Capacitance values for TFBGA packages
are lower by 0.5 pF.
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| HYB39S256160TE-5 | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| HYB39S256160TE-6 | surface mount silicon Zener diodes |
| HYB39S256160TE-7 | surface mount silicon Zener diodes |
| HYB39S256160TE-75 | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HYB39S256160TE-3 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:MEMORY SPECTRUM |
| HYB39S256160TE-37 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:MEMORY SPECTRUM |
| HYB39S256160TE-5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:MEMORY SPECTRUM |
| HYB39S256160TE-6 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:MEMORY SPECTRUM |
| HYB39S256160TE-7 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:MEMORY SPECTRUM |
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