參數(shù)資料
型號: HYB3165165T-60
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 4M x 16-Bit Dynamic RAM
中文描述: 4M X 16 EDO DRAM, 60 ns, PDSO54
文件頁數(shù): 19/29頁
文件大?。?/td> 284K
代理商: HYB3165165T-60
Semiconductor Group
19
HYB3164(5/6)165AT(L)-40/-50/-60
4M x 16 EDO-DRAM
Hyper Page Mode (EDO) Read Cycle (OE Control)
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AAA
AAA
AAA
AAA
AAA
AAA
t
RP
t
RSH
t
CAS
t
CAS
t
CP
t
CRP
t
RAL
t
CAH
t
CAH
t
ASC
t
CSH
t
CAS
t
RCD
t
RAH
t
ASR
Column 2
Row
Data Out
1
RAS
I/O
(Output)
WE
Address
UCAS
LCAS
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
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AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
“H” or “L”
VOH
VOL
OE
t
RAS
t
CRP
t
ASC
t
HPC
t
CAH
t
RAD
t
RHCP
t
ASC
t
RCS
t
RRH
t
RCH
t
AA
t
CAC
t
CLZ
t
OEA
t
OES
t
OEZ
t
CAC
t
AA
t
CPA
Data Out
Column N
Column 1
AAA
AAA
AAA
AAA
AAA
AAA
AAA
Data Out
N
t
OEZ
t
OFF
t
CAC
t
AA
t
CPA
2
t
OEP
t
OEHC
t
OEA
t
OEP
t
OEHC
t
OEZ
t
OEA
WL6
相關PDF資料
PDF描述
HYB3164165AT-60 4M x 16-Bit Dynamic RAM
HYB3165165AT-60 4M x 16-Bit Dynamic RAM
HYB3166165AT-60 4M x 16-Bit Dynamic RAM
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