參數(shù)資料
型號: HYB3164405BT-50
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 16M x 4-Bit Dynamic RAM
中文描述: 16M X 4 EDO DRAM, 50 ns, PDSO32
封裝: 0.400 INCH, PLASTIC, TSOP2-32
文件頁數(shù): 4/32頁
文件大小: 473K
代理商: HYB3164405BT-50
Semiconductor Group
92
HYB3164(5)405J/T(L)-50/-60
16M x 4-DRAM
TRUTH TABLE
FUNCTION
RAS
CAS
WRITE
OE
ROW
ADDR
COL
ADDR
I/O1-
I/O4
Standby
H
H - X
X
X
X
X
High Impedance
Read
L
L
H
L
ROW
COL
Data Out
Early-Write
L
L
L
X
ROW
COL
Data In
Delayed-Write
L
L
H - L
H
ROW
COL
Data In
Read-Modify-Write
L
L
H - L
L - H
ROW
COL
Data Out, Data In
Hyper Page Mode Read
1st Cycle
L
H - L
H
L
ROW
COL
Data Out
2nd Cycle
L
H - L
H
L
n/a
COL
Data Out
Hyper Page Mode Write 1st Cycle
L
H - L
L
X
ROW
COL
Data In
2nd Cycle
L
H - L
L
X
n/a
COL
Data In
Hyper Page Mode RMW 1st Cycle
L
H - L
H - L
L - H
ROW
COL
Data Out, Data In
2st Cycle
L
H - L
H - L
L - H
n/a
COL
Data Out, Data In
RAS only refresh
L
H
X
X
ROW
n/a
High Impedance
CAS-before-RAS refresh
H - L
L
H
X
X
n/a
High Impedance
Test Mode Entry
H - L
L
L
X
X
n/a
High Impedance
Hidden Refresh
READ
L-H-L
L
H
L
ROW
COL
Data Out
WRITE
L-H-L
L
L
X
ROW
COL
Data In
Self Refresh
(L-version only)
H - L
L
H
X
X
X
High Impedance
相關(guān)PDF資料
PDF描述
HYB3165405BT-50 16M x 4-Bit Dynamic RAM
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HYB3165405BT-60 16M x 4-Bit Dynamic RAM
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HYB3165405TL-50 16M x 4-Bit Dynamic RAM
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