參數(shù)資料
型號: HYB314405BJL-60
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 1M x 4-Bit Dynamic RAM
中文描述: 1M X 4 EDO DRAM, 60 ns, PDSO20
封裝: 0.300 INCH, PLASTIC, SOJ-26
文件頁數(shù): 2/25頁
文件大?。?/td> 1363K
代理商: HYB314405BJL-60
Semiconductor Group
2
HYB 314405BJ/BJL-50/-60/-70
3.3V 1M x 4 EDO - DRAM
The HYB 314405BJ/BJL is the new generation dynamic RAM organized as 1 048 576 words by
4-bit. The HYB 314405BJ/BJL utilizes CMOS silicon gate process as well as advances circuit
techniques to provide wide operation margins, both internally and for the system user. Multiplexed
address inputs permit the HYB 314405BJ/BJL to be packed in a standard plastic P-SOJ-26/20
package. This package size provides high system bit densities and is compatible with commonly
used automatic testing and insertion equipment. System oriented features include single + 3.3 V
(
±
0.3 V) power supply, direct interfacing with high performance logic device families.
Ordering Information
Type
Ordering Code
Package
Descriptions
HYB 314405BJ-50
Q67100-Q2122
P-SOJ-26/20-5
3.3 V EDO-DRAM
(access time 50 ns)
HYB 314405BJ-60
Q67100-Q2124
P-SOJ-26/20-5
3.3 V EDO-DRAM
(access time 60 ns)
HYB 314405BJ-70
Q67100-Q2126
P-SOJ-26/20-5
3.3 V EDO-DRAM
(access time 70 ns)
HYB 314405BJL-50
on request
P-SOJ-26/20-5
3.3 V Low Power EDO-DRAM
(access time 50 ns)
HYB 314405BJL-60
on request
P-SOJ-26/20-5
3.3 V Low Power EDO-DRAM
(access time 60 ns)
HYB 314405BJL-70
on request
P-SOJ-26/20-5
3.3 V Low Power EDO-DRAM
(access time 70 ns)
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