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參數(shù)資料
| 型號： | HYB314405BJL-50 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | 1M x 4-Bit Dynamic RAM |
| 中文描述： | 1M X 4 EDO DRAM, 50 ns, PDSO20 |
| 封裝： | 0.300 INCH, PLASTIC, SOJ-26 |
| 文件頁數(shù)： | 7/25頁 |
| 文件大?。?/td> | 1363K |
| 代理商： | HYB314405BJL-50 |
Semiconductor Group
7
HYB 314405BJ/BJL-50/-60/-70
3.3V 1M x 4 EDO - DRAM
RAS hold time
t
RSH
t
CSH
t
CRP
t
T
t
REF
t
REF
13
15
–
17
–
ns
CAS hold time
50
60
–
70
–
ns
CAS to RAS precharge time
5
–
5
–
5
–
ns
Transition time (rise and fall)
1
50
1
50
1
50
ns
7
Refresh period
–
16
–
16
–
16
ms
Refresh period for L-version
–
128
–
128
–
128
ms
Read Cycle
Access time from RAS
t
RAC
t
CAC
t
AA
–
50
–
60
–
70
ns
8, 9
Access time from CAS
–
13
–
15
–
17
ns
8, 9
Access time from column
address
–
25
–
30
–
35
ns
8,10
OE access time
t
OEA
t
RAL
–
13
–
15
–
17
ns
Column address to RAS lead
time
25
–
30
–
35
–
ns
Read command setup time
t
RCS
t
RCH
t
RRH
0
–
0
–
0
–
ns
Read command hold time
0
–
0
–
0
–
ns
11
Read command hold time
referenced to RAS
0
–
0
–
0
–
ns
11
CAS to output in low-Z
t
CLZ
t
OFF
t
OEZ
0
–
0
–
0
–
ns
8
Output buffer turn-off delay
0
13
0
15
0
17
ns
12
Output buffer turn-off delay from
OE
0
13
0
15
0
17
ns
12
Data to CAS low delay
t
DZC
t
DZO
t
CDD
t
ODD
0
–
0
–
0
–
ns
13
Data to OE low delay
0
–
0
–
0
–
ns
13
CAS high to data delay
10
–
13
–
15
–
ns
14
OE high to data delay
10
–
13
–
15
–
ns
14
Write Cycle
Write command hold time
t
WCH
t
WP
8
–
10
–
10
–
ns
Write command pulse width
8
–
10
–
10
–
ns
AC Characteristics
(cont’d)
5)6)
T
A
= 0 to 70 C,
V
CC
= 3.3 V
±
0.3 V,
t
T
= 2 ns
Parameter
Symbol
Limit Values
Unit
Note
-50
-60
-70
min.
max. min.
max. min.
max.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB314405BJL-60 | 1M x 4-Bit Dynamic RAM |
| HYB314405BJL-70 | 1M x 4-Bit Dynamic RAM |
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| HYB3164400AT-60 | 16M x 4-Bit Dynamic RAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB314405BJL-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM |
| HYB314405BJL-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM |
| HYB3164(5)400ATL | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM |
| HYB3164(5)800ATL | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:8M x 8-Bit Dynamic RAM |
| HYB316400BTL-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit Dynamic RAM |
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