參數(shù)資料
型號(hào): HYB3118165BSJ-60
廠商: SIEMENS A G
元件分類(lèi): DRAM
英文描述: High-Speed Fully-Differential Amplifiers 8-MSOP -40 to 85
中文描述: 1M X 16 EDO DRAM, 60 ns, PDSO42
封裝: 0.400 INCH, PLASTIC, SOJ-42
文件頁(yè)數(shù): 16/24頁(yè)
文件大?。?/td> 192K
代理商: HYB3118165BSJ-60
HYB 5118165BSJ/BST-50/-60
HYB 3118165BSJ/BST-50/-60
1M
×
16 EDO-DRAM
Semiconductor Group
16
1998-10-01
Hyper Page Mode (EDO) Early Write Cycle
SPT03057
"H" or "L"
Column 2
DS
t
IH
V
I/O
(Input)
OE
V
V
IL
IH
V
IL
WE
V
V
IL
IH
Data IN 1
t
DS
WCS
t
t
DH
t
WP
CWL
t
t
WCH
t
t
WCS
LCAS
Address
V
IL
V
IH
IL
V
UCAS
RAS
V
IH
IL
V
V
IH
t
Column 1
t
ASC
Address
Row
ASR
t
RAD
t
RAH
t
t
CRP
t
RCD
t
CSH
CAH
ASC
t
HPC
CAS
t
t
CP
t
Data IN N
DS
Data IN 2
t
DH
t
CWL
WCH
WP
t
t
t
t
WCS
t
DH
t
t
WCH
WP
t
CWL
CRP
RP
t
Column N
CAH
t
ASC
t
t
CAS
RWL
t
t
CAH
t
RAL
RSH
t
CAS
t
RHCP
t
t
RAS
相關(guān)PDF資料
PDF描述
HYB3118165BST-50 High-Speed Fully-Differential Amplifiers 8-MSOP -40 to 85
HYB3118165BST-60 High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85
HYB 3118165BSJ 1M×16-Bit Dynamic RAM (Hyper Page Mode-EDO)(1M×16位 動(dòng)態(tài) RAM)
HYB 3118165BST-50 1M×16-Bit Dynamic RAM (Hyper Page Mode-EDO)(1M×16位 動(dòng)態(tài) RAM)
HYB 3118165BST-60 1M×16-Bit Dynamic RAM (Hyper Page Mode-EDO)(1M×16位 動(dòng)態(tài) RAM)
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