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參數(shù)資料
| 型號(hào)： | HYB3117400BT-70 |
| 廠商： | SIEMENS A G |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 3.3V 4M x 4-Bit Dynamic RAM |
| 中文描述： | 4M X 4 FAST PAGE DRAM, 70 ns, PDSO24 |
| 文件頁(yè)數(shù)： | 13/26頁(yè) |
| 文件大?。?/td> | 253K |
| 代理商： | HYB3117400BT-70 |
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Semiconductor Group
13
HYB 3116(7)400BJ/BT(L) -50/-60/-70
3.3V 4Mx4-DRAM
Write Cycle (Early Write)
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB3116400BT-70 | 3.3V 4M x 4-Bit Dynamic RAM |
| HYB3117400BT-60 | 3.3V 4M x 4-Bit Dynamic RAM |
| HYB3116400BT-60 | 3.3V 4M x 4-Bit Dynamic RAM |
| HYB3116400BJBTL-50- | 3.3V 4M x 4-Bit Dynamic RAM |
| HYB3116400BJ-60 | RES 10K-OHM 5% 0.063W 200PPM THICK-FILM SMD-0402 5K/REEL-7IN-PA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB3117405BJ-50 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
| HYB3117405BJ-60 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit EDO-Dynamic RAM |
| HYB3117405BJ-70 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit EDO-Dynamic RAM |
| HYB3117405BT-50 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
| HYB3117405BT-60 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
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