參數(shù)資料
型號: HYB25T512160TG-3
廠商: INFINEON TECHNOLOGIES AG
英文描述: COG Technology, 128 x 48 pixel format
中文描述: 記憶譜
文件頁數(shù): 4/28頁
文件大?。?/td> 2148K
代理商: HYB25T512160TG-3
D R A M C o m p o n e n t s
Speed/Performance
3
3.7
5
6
7
7F
7.5
8
=
=
=
=
=
=
=
=
DDR2-667 4-4-4
DDR2-533 4-4-4
DDR2-400 3-3-3/DDR400B 3-3-3
DDR333 2.5-3-3/PC166 3-3-3
DDR266A 2-3-3/PC133 2-2-2
DDR266 2-2-2
DDR266B 2.5-3-3/PC133 3-3-3
DDR200 2-2-2/PC100 2-2-2
(DDR2)
(DDR2)
(DDR2/DDR)
(DDR/SDR)
(DDR/SDR)
(DDR)
(DDR/SDR)
(DDR/SDR)
Power
none =
L
Standard Power
Low-Power Product
=
Package
C
T
E
F
G
=
=
=
=
=
FBGA
TSOP 400 mil
TSOP 400 mil
FBGA
TSOP stack
Contains Lead
Contains Lead
Lead and Halogen-Free (ROHS*-compliant)
Lead and Halogen-Free (ROHS*-compliant)
Lead and Halogen-Free (ROHS*-compliant)
Product Revision
Die Revision
Product Variation
0
=
Standard Product
Organization
40
80
16
=
=
=
x 4
x 8
x 16
Memory Density
128
256
512
1G
=
=
=
=
128 Mb
256 Mb
512 Mb
1024 Mb
Memory Type
S
D
T
=
=
=
SDR Single Data Rate SDRAM
DDR Double Data Rate SDRAM
DDR2
Double Data Rate 2 SDRAM
Supply Voltage
39
25
18
=
=
=
3.3V
2.5V
1.8V
Prefix
HYB =
Memory Components
*ROHS = Restriction Of Hazardous Substances
HYB 25 D 128
80 0 C T
- 6 (Example)
4
D
S
F
4
Nomenclature DRAM Components
D
相關(guān)PDF資料
PDF描述
HYB18S1G160TG-3 128 x 64 pixel format, LED or EL Backlight available
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