參數(shù)資料
型號: HYB25T1G800TGL-5
廠商: INFINEON TECHNOLOGIES AG
英文描述: MEMORY SPECTRUM
中文描述: 記憶譜
文件頁數(shù): 25/28頁
文件大?。?/td> 1526K
代理商: HYB25T1G800TGL-5
D
S
F
D
25
Nomenclature TwinFlash
Components
F l a s h
Temperature Range
C
=
Commercial (0°C – +70°C)
Package
T
=
TSOP I 48-P-1220-0.5
Process Technology
A
B
=
=
170 nm Process Technology
170 nm Process Technology (Enhanced Write Speed)
Product Variation
0
2
=
=
Standard Product (Tape & Reel Packing)
Stacked Die (Tape & Reel Packing)
Organization
80
=
x 8
Memory Density
512
1G
=
=
512 Mb
1024 Mb
Memory Type
DS
=
Data SLC: TwinFlash Single-Level Cell (2 bit / cell)
Supply and
I/O Voltage
33
31
=
=
3.3V core and 3V I/O
3.3V core and 1.8V I/O
Prefix
HYF
=
Flash Memory Components
HYF
33
DS
512
80
0
A
T
C
(Example)
TwinFlash
Components
Density
Organization
Page Size
Block Size
Core
Voltage
I/O
Write
Speed
Sales
Description
Ordering Code
Package
Voltage
512 Mb
3 V
Normal
HYF33DS512800ATC
64 M x 8
512 + 16 Bytes
16 K + 512 Bytes
3 V
3 V
Enhanced
HYF33DS512800BTC
On request
P-TSOPI-48
1.8 V
Enhanced
HYF31DS512800BTC
1 Gb
3 V
Normal
HYF33DS1G802ATC
128 M x 8
512 + 16 Bytes
16 K + 512 Bytes
3 V
3 V
Enhanced
HYF33DS1G802BTC
On request
P-TSOPI-48
1.8 V
Enhanced
HYF31DS1G802BTC
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