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參數(shù)資料
| 型號： | HYB25R144180C |
| 廠商： | SIEMENS AG |
| 英文描述： | 144-Mbit direct RDRAM(144 Mbit 直接 RDRAM) |
| 中文描述： | 144兆位的直接的RDRAM（144兆直接的RDRAM） |
| 文件頁數(shù)： | 1/93頁 |
| 文件大?。?/td> | 919K |
| 代理商： | HYB25R144180C |
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Data Book
1
2.00
Direct RDRAM
128/144-MBit (256K
×
16/18
×
32s)
Overview
The Rambus Direct RDRAM
is a general purpose high-performance memory device suitable for
use in a broad range of applications including computer memory, graphics, video, and any other
application where high bandwidth and low latency are required.
The 128/144-Mbit Direct Rambus DRAMs (RDRAM
) are extremely high-speed CMOS DRAMs
organized as 8M words by 16 or 18 bits. The use of Rambus Signaling Level (RSL) technology
permits 600 MHz to 800 MHz transfer rates while using conventional system and board design
technologies. Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two
bytes (10 ns per sixteen bytes).
The architecture of the Direct RDRAMs allows the highest sustained bandwidth for multiple,
simultaneous randomly addressed memory transactions. The separate control and data buses with
independent row and column control yield over 95% bus efficiency. The Direct RDRAM’s thirty-two
banks support up to four simultaneous transactions.
System oriented features for mobile, graphics and large memory systems include power
management, byte masking, and x18 organization. The two data bits in the x18 organization are
general and can be used for additional storage and bandwidth or for error correction.
Features
Highest sustained bandwidth per DRAM device
– 1.6 GB/s sustained data transfer rate
– Separate control and data buses for maximized efficiency
– Separate row and column control buses for easy scheduling and highest performance
– 32 banks: four transactions can take place simultaneously at full bandwidth data rates
Low latency features
– Write buffer to reduce read latency
– 3 precharge mechanisms for controller flexibility
– Interleaved transactions
Advanced power management:
– Multiple low power states allows flexibility in power consumption versus time to transition to
active state
– Power-down self-refresh
Organization: 1 Kbyte pages and 32 banks, x16/18
– x18 organization allows ECC configurations or increased storage/bandwidth
– x16 organization for low cost applications
Uses Rambus Signaling Level (RSL) for up to 800 MHz operation
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB3116160BST-70 | 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3118160BST-70 | 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BST-60 | 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3118160BST-60 | 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BSJ | RES 10K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 5K/REEL-7IN-PA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB3116160BSJ | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BSJ-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BSJ-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BSJ-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BST-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
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