參數(shù)資料
型號： HYB25D128160TE-6
廠商： INFINEON TECHNOLOGIES AG
英文描述： MEMORY SPECTRUM
中文描述： 記憶譜
文件頁數(shù)： 63/85頁
文件大?。?/td> 3085K
代理商： HYB25D128160TE-6
Data Sheet
63
Rev. 1.0, 2004-04
HYB25D128[400/800/160]C[C/E/T](L)
128 Mbit Double Data Rate SDRAM
Electrical Characteristics
4.2
Weak Strength Pull-down and Pull-up Characteristics
1. The weak pull-down
V
-
I
curve for DDR SDRAM devices is expected, but not guaranteed, to lie within the inner
bounding lines of the
V
-
I
curve.
2. The weak pull-up
V
-
I
curve for DDR SDRAM devices is expected, but not guaranteed, to lie within the inner
bounding lines of the
V
-
I
curve.
3. The full variation in driver pull-up current from minimum to maximum process, temperature, and voltage lie
within the outer bounding lines of the
V
-
I
curve.
4. The full variation in the ratio of the maximum to minimum pull-up and pull-down current does not exceed 1.7,
for device drain to source voltages from 0.1 to 1.0.
5. The full variation in the ratio of the nominal pull-up to pull-down current should be unity
±
10%, for device drain
to source voltages from 0.1 to 1.0 V.
Figure 35
Weak Strength Pull-down Characteristics
Figure 36
Weak Strength Pull-up Characteristics
0
10
20
30
40
50
60
70
80
0,0
0,5
1,0
1,5
2,0
2,5
Vout [V]
I
Maximum
Typical high
Typical low
Minimum
-80,0
-70,0
-60,0
-50,0
-40,0
-30,0
-20,0
-10,0
0,0
0,0
0,5
1,0
1,5
2,0
2,5
Vout [V]
I
Maximum
Typical high
Typical low
Minimum
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB25D128160TE-7 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:MEMORY SPECTRUM
HYB25D128160TE-75 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:MEMORY SPECTRUM
HYB25D128160TE-7F 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:MEMORY SPECTRUM
HYB25D128160TE-8 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:MEMORY SPECTRUM
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