參數(shù)資料
型號(hào): HYB25D128160TCL-5
廠商: INFINEON TECHNOLOGIES AG
英文描述: MEMORY SPECTRUM
中文描述: 記憶譜
文件頁數(shù): 36/85頁
文件大?。?/td> 3085K
代理商: HYB25D128160TCL-5
HYB25D128[400/800/160]C[C/E/T](L)
128 Mbit Double Data Rate SDRAM
Functional Description
Data Sheet
36
Rev. 1.0, 2004-04
Figure 15
Read to Write: CAS Latencies (Burst Length = 4 or 8)
CAS Latency = 2
BST
NOP
Write
NOP
NOP
Read
DI a-b
CK
CK
Command
Address
DQS
DQ
DM
DOa-n
DO a-n = data out from bank a, column n
.DI a-b = data in to bank a, column b
1 subsequent elements of data out appear in the programmed order following DO a-n.
Data In elements are applied following Dl a-b in the programmed order, according to burst length.
Shown with nominal t
AC
, t
DQSCK
, and t
DQSQ
.
Don’t Care
BAa, COL n
BAa, COL b
CL=2
t
DQSS
(min)
CAS Latency = 2.5
BST
NOP
NOP
Write
NOP
Read
CK
CK
Command
Address
DQS
DQ
DM
DOa-n
BAa, COL n
BAa, COL b
CL=2.5
t
DQSS
(min)
Dla-b
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