參數(shù)資料
型號： HYB25D128160TC-3
廠商： INFINEON TECHNOLOGIES AG
英文描述： MEMORY SPECTRUM
中文描述： 記憶譜
文件頁數(shù)： 61/85頁
文件大小： 3085K
代理商： HYB25D128160TC-3
Data Sheet
61
Rev. 1.0, 2004-04
HYB25D128[400/800/160]C[C/E/T](L)
128 Mbit Double Data Rate SDRAM
Electrical Characteristics
4.1
Normal Strength Pull-down and Pull-up Characteristics
1. The nominal pull-down
V
-
I
curve for DDR SDRAM devices is expected, but not guaranteed, to lie within the
inner bounding lines of the
V
-
I
curve.
2. The full variation in driver pull-down current from minimum to maximum process, temperature, and voltage lie
within the outer bounding lines of the
V
-
I
curve.
3. The nominal pull-up
V
-
I
curve for DDR SDRAM devices is expected, but not guaranteed, to lie within the inner
bounding lines of the
V
-
I
curve.
4. The full variation in driver pull-up current from minimum to maximum process, temperature, and voltage lie
within the outer bounding lines of the
V
-
I
curve.
5. The full variation in the ratio of the maximum to minimum pull-up and pull-down current does not exceed 1.7,
for device drain to source voltages from 0.1 to 1.0.
6. The full variation in the ratio of the nominal pull-up to pull-down current should be unity
±
10%, for device drain
to source voltages from 0.1 to 1.0 V.
Figure 33
Normal Strength Pull-down Characteristics
Figure 34
Normal Strength Pull-up Characteristics
0
0.5
1
1.5
2
2.5
0
20
40
60
80
100
120
140
I
O
V
DDQ
-
V
OUT
(V)
Maximum
Nominal High
Nominal Low
Minimum
Maximum
Nominal High
Nominal Low
Minimum
V
DDQ
-
V
OUT
(V)
0.5
1
1.5
2
2.5
0
0
-20
-40
-60
-80
-100
-120
-140
-160
I
O
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