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參數(shù)資料
| 型號： | HYB18T1G800TFL-75 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | MEMORY SPECTRUM |
| 中文描述： | 記憶譜 |
| 文件頁數(shù)： | 25/28頁 |
| 文件大?。?/td> | 1526K |
| 代理商： | HYB18T1G800TFL-75 |
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D
S
F
D
25
Nomenclature TwinFlash
Components
F l a s h
Temperature Range
C
=
Commercial (0°C – +70°C)
Package
T
=
TSOP I 48-P-1220-0.5
Process Technology
A
B
=
=
170 nm Process Technology
170 nm Process Technology (Enhanced Write Speed)
Product Variation
0
2
=
=
Standard Product (Tape & Reel Packing)
Stacked Die (Tape & Reel Packing)
Organization
80
=
x 8
Memory Density
512
1G
=
=
512 Mb
1024 Mb
Memory Type
DS
=
Data SLC: TwinFlash Single-Level Cell (2 bit / cell)
Supply and
I/O Voltage
33
31
=
=
3.3V core and 3V I/O
3.3V core and 1.8V I/O
Prefix
HYF
=
Flash Memory Components
HYF
33
DS
512
80
0
A
T
C
(Example)
TwinFlash
Components
Density
Organization
Page Size
Block Size
Core
Voltage
I/O
Write
Speed
Sales
Description
Ordering Code
Package
Voltage
512 Mb
3 V
Normal
HYF33DS512800ATC
64 M x 8
512 + 16 Bytes
16 K + 512 Bytes
3 V
3 V
Enhanced
HYF33DS512800BTC
On request
P-TSOPI-48
1.8 V
Enhanced
HYF31DS512800BTC
1 Gb
3 V
Normal
HYF33DS1G802ATC
128 M x 8
512 + 16 Bytes
16 K + 512 Bytes
3 V
3 V
Enhanced
HYF33DS1G802BTC
On request
P-TSOPI-48
1.8 V
Enhanced
HYF31DS1G802BTC
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB18T1G800TFL-7F | MEMORY SPECTRUM |
| HYB18T1G800TG-3 | MEMORY SPECTRUM |
| HYB18T256160TC-8 | MEMORY SPECTRUM |
| HYB18T256160TCL-3 | MEMORY SPECTRUM |
| HYB18T256160TCL-37 | MEMORY SPECTRUM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB18T256400AF-3.7 | 制造商:Infineon Technologies AG 功能描述:64M X 4 DDR DRAM, 0.5 ns, PBGA60 |
| HYB18T256400AF-5 | 制造商:Infineon Technologies AG 功能描述:SDRAM, DDR, 64M x 4, 60 Pin, Plastic, BGA |
| HYB18T256800AF-5 | 制造商:Infineon Technologies AG 功能描述: |
| HYB18T512161BF-25 | 制造商:Qimonda 功能描述:SDRAM, DDR, 32M x 16, 84 Pin, Plastic, BGA |
| HYB18T512400AF-5 | 制造商:Intersil Corporation 功能描述:SDRAM, DDR, 128M x 4, 60 Pin, Plastic, BGA |
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