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參數(shù)資料
| 型號： | HYB18S1G160TG-3 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | 128 x 64 pixel format, LED or EL Backlight available |
| 中文描述： | 記憶譜 |
| 文件頁數(shù)： | 9/28頁 |
| 文件大?。?/td> | 2148K |
| 代理商： | HYB18S1G160TG-3 |
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D
S
F
D
9
Nomenclature DDR/DDR2 Modules
Unbuffered DIMM, Registered DIMM (184-pin) and SO-DIMM (200-pin)
D R A M M o d u l e s
Part Number
Extension
Component Die Revision Indicator
Speed
8
7.5
7
7F
6
5
3.7
3
=
=
=
=
=
=
=
=
PC1600 2-2-2
PC2100 2.5-3-3
PC2100 2-3-3
PC2100 2-2-2
PC2700 2.5-3-3
PC3200 3-3-3 / PC2-3200 3-3-3
PC2-4300 4-4-4
PC2-5300 4-4-4
DDR200
DDR266B
DDR266A
DDR266
DDR333
DDR400 / DDR2-400
DDR2-533
DDR2-667
Power
L
none =
=
Low Power
Standard Power
Module Family
U
R
D
BD
BR
=
=
=
=
=
Unbuffered DIMM
Registered DIMM
SO-DIMM
SO-DIMM
Registered DIMM
TSOP-based for DDR / FBGA-based for DDR2
TSOP-based for DDR / FBGA-based for DDR2
TSOP-based for DDR / FBGA-based for DDR2
FBGA-based
FBGA-based
Package Type
G
H
E
=
=
=
Contains Lead
Lead-Free (ROHS*-compliant)
Lead and Halogen-Free available on request (ROHS*-compliant)
Designator
Product Variations
Number of
Memory Ranks
0
2
=
=
One Memory Module Rank
Two Memory Module Ranks
Designator
Data Sheet Defined
Memory Density
per DQ
16
32
64
128
256
=
=
=
=
=
16 Mb
32 Mb
64 Mb
128 Mb
256 Mb
Power Supply
D
T
=
=
2.5 V (DDR Modules)
1.8 V (DDR2 Modules)
Data Width
64
72
=
=
x 64 (Non-ECC)
x 72 (ECC)
Prefix
HYS =
Standard Prefix for SDRAM-based Memory Modules
*ROHS = Restriction Of Hazardous Substances
HYS
64
D
32
2
2
0
G
D
L
- 6 - A
(Example)
相關PDF資料 |
PDF描述 |
|---|---|
| HYB25S1G160TG-3 | 128 x 64 pixel format, LED or EL Backlight available |
| HYB25S256160TT-3 | 160 x 160 pixel format, EL Backlight (blue-green) |
| HYB18D256160TT-3 | 160 x 160 pixel format, White LED backlight |
| HYB39D256160TT-3 | 240 x 128 pixel format, CFL Backlight with power harness |
| HYB18T256160TT-3 | 240 x 128 pixel format, CFL Backlight with power harness |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HYB18T1G400AF-3.7 | 制造商:Infineon Technologies AG 功能描述:SDRAM, DDR, 256M x 4, 68 Pin, Plastic, BGA |
| HYB18T1G400AF-5 | 制造商:Infineon Technologies AG 功能描述:256M X 4 DDR DRAM, 0.6 ns, PBGA68 |
| HYB18T1G800BF-3S | 功能描述:IC DDR2 SDRAM 1GBIT 68TFBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:60 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:16K (2K x 8) 速度:2MHz 接口:SPI 3 線串行 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-DIP（0.300"，7.62mm） 供應商設備封裝:8-PDIP 包裝:管件 產(chǎn)品目錄頁面:1449 (CN2011-ZH PDF) |
| HYB18T256400AF-3.7 | 制造商:Infineon Technologies AG 功能描述:64M X 4 DDR DRAM, 0.5 ns, PBGA60 |
| HYB18T256400AF-5 | 制造商:Infineon Technologies AG 功能描述:SDRAM, DDR, 64M x 4, 60 Pin, Plastic, BGA |
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