參數(shù)資料
型號: HYB18D128160TE-8
廠商: INFINEON TECHNOLOGIES AG
英文描述: MEMORY SPECTRUM
中文描述: 記憶譜
文件頁數(shù): 24/28頁
文件大?。?/td> 2148K
代理商: HYB18D128160TE-8
D
S
F
D
24
Speed
Package
C
W
=
=
Chip-size Package
Wafer / Known Good Die
Product Revision
Die Revision
Interface
0
1
=
=
Sync /Async / Page
Async / Page only
Organization
16
=
x 16
Memory Density
16
32
=
=
16 Mb
32 Mb
Memory Type
P
=
CellularRAM (PSRAM)
Supply Voltage
18
=
1.8V VDD / 1.8 – 3.0V VDDQ
Prefix
HYE =
Extended Temperature
HYE
18
P
16
16
1
A
C
-60 (Example)
CellularRAM
X = Lead-Free
Nomenclature CellularRAM
Density
Organization
Interface
Speed
Sales Description
Speed No.
Ordering Code
Package
Prod.
Green
16Mb
85ns
85
Q67100
Q5098
VFBGA-48
Async
1Mx16
SRAM
70ns
HYE18P16161AC-
70
Q67100
Q5099
VFBGA-48
2Q04
X
70ns
HYE18P16161AW-
70
Q67100
Q5101
Wafer/KGD
32Mb
85ns
85
Q67100
Q5103
VFBGA-48
Async
2Mx16
SRAM
70ns
HYE18P32161AC-
70
Q67100
Q5104
VFBGA-48
2Q04
X
70ns
HYE18P32161AW-
70
Q67100
Q5106
Wafer/KGD
32Mb
80MHz/70ns
12.5
Q67100
Q1802
VFBGA-54
Sync
2Mx16
SRAM
/ Flash
66MHz/85ns
HYE18P32160AC-
15
Q67100
Q5108
VFBGA-54
2Q04
X
66MHz/85ns
HYE18P32160AW-
15
Q67100
Q5110
Wafer/KGD
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