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參數(shù)資料
| 型號(hào)： | HYB 514400BJ-60 |
| 廠商： | SIEMENS AG |
| 英文描述： | 4M × 1-Bit Dynamic RAM(4M × 1位動(dòng)態(tài)RAM) |
| 中文描述： | 4米× 1位動(dòng)態(tài)隨機(jī)存儲(chǔ)器（4米× 1位動(dòng)態(tài)內(nèi)存） |
| 文件頁(yè)數(shù)： | 23/24頁(yè) |
| 文件大小： | 124K |
| 代理商： | HYB 514400BJ-60 |
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HYB 514400BJ-50/-60
1M
×
4 DRAM
Semiconductor Group
23
1998-10-01
Test Mode
As the HYB 514400BJ is organized internally as 512k
×
8-bits, a test mode cycle using 8:1
compression can be used to improve test time. Note that in the 1M
×
4 version the test time is
reduced by 1/2 for a linear test pattern.
In a test mode “write” the data from each I/O1 pin is written into eight bits simultaneously (all “1” or
all “0”).The I/O2 - I/O4 inputs are not used for writing in test mode. In test mode “read” each I/O
output is used for indicating the test mode result. If the internal eight bits are equal, the I/O would
indicate a “1”. If they were not equal, the I/O would indicate a “0”. Note that in test mode read“
I/O1-I/O3 are always driven to “ones”, i.e. all outputs will be “1” for a test mode “pass”. The WCBR
cycle (WE, CAS-before-RAS) puts the device into test mode. To exit from test mode, a
“CAS-before-RAS refresh”, “RAS-only refresh” or “Hidden refresh” can be used.
Addresses A10R, A10C and A0C are don‘t care during test mode.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB514400BJ-70 | 1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM |
| HYB514400BT-80 | RP12 (A) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 48V; Output Voltage (Vdc): 5V; 2:1 Wide Input Voltage Range; 12 Watts Output Power; 1.6kVDC Isolation; UL Certified; Over Current Protection; Five-Sided Shield; Standard DIP24 and SMD-Pinning; Efficiency to 88% |
| HYB514400BJ | 1M x 4-BIT DYNAMIC RAM LOW POWER 1M x 4-BIT DYNAMIC RAM |
| HYB514400BJ-50- | RES 12K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 5K/REEL-7IN-PA |
| HYB514400BJ-60 | 1M x 4-Bit Dynamic RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB514400BJ-60 | 制造商:Siemens 功能描述:Dynamic RAM, Fast Page, 1M x 4, 26 Pin, Plastic, SOJ |
| HYB514400BJ-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-BIT DYNAMIC RAM LOW POWER 1M x 4-BIT DYNAMIC RAM |
| HYB514400BJ-80 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM |
| HYB514400BJ-BT60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM |
| HYB514400BJL-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-BIT DYNAMIC RAM LOW POWER 1M x 4-BIT DYNAMIC RAM |
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