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參數資料
| 型號： | HY64UD16322M |
| 英文描述： | x16|3.0(VDD)3.0(VDDQ)V|70/85|Pseudo SRAM - 32M |
| 中文描述： | x16 | 3.0（VDD）在3.0（提供VDDQ）V | 70/85 |偽靜態(tài)存儲器- 32M的 |
| 文件頁數： | 1/11頁 |
| 文件大小： | 350K |
| 代理商： | HY64UD16322M |
HY64UD16162M Series
1
Revision 1.7
March. 2002
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not
assume any responsibility for use of circuits described. No patent licenses are implied.
Document Title
1
1
M x 16 bit Low
Low Power 1T/1C
Pseudo SRAM
Revision history
Revision No.
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
History
Initial
Revised
- Change Pin Connection
- Improve tOE from 45ns to 30ns
- Correct State Diagram
Revised
- Correct Package Dimension
- Change Absolute Maximum Ratings
Revised
- DC Electrical Characteristics ( I
DPD
,I
CC1
)
- State Diagram
- Power Up Sequence
- Deep Power Down Sequence
- Read/Write Cycle Note
Revised
- DC Electrical Characteristics ( ICC1: 3mA - > 5mA)
Revised
- Improve Standby Current I
SB1
from 100uA to 80uA
- Add 70ns Part
- Power Up Sequence
Revised
- Improve ISB1@70ns 100uA to 85uA
- Improve ISB1@85ns 80uA to 75uA
- Improve ICC2@70ns 30mA to 25mA
- Improve ICC2@85ns 30mA to 20mA
- Improve Ambient Temperature C/E to E/I
(0
°
C~85
°
C/-25
°
C~85
°
C
→
-25
°
C~85
°
C/-40
°
C~85
°
C)
- Improve Maximum Absolute Ratings
(Vdd : -0.3V to 3.3V
→
-0.3V to 3.6V)
- Improve tOE@85ns 30ns to 20ns
Revised
- Pin Description
- Power Up & Deep Power Down Exit Sequence
Draft Date
Jan. 04. ’01
Jul. 03. ’01
Jul.18. ’01
Oct. 07. ‘01
Nov. 14. ’01
Dec. 20. ‘01
Feb. 27. ‘02
Mar. 11. ‘02
Remark
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Final
相關PDF資料 |
PDF描述 |
|---|---|
| HY64UD16322M-DF70E | PSEUDO-STATIC RAM|2MX16|CMOS|BGA|48PIN|PLASTIC |
| HY64UD16322M-DF70I | PSEUDO-STATIC RAM|2MX16|CMOS|BGA|48PIN|PLASTIC |
| HY64UD16322M-DF85E | PSEUDO-STATIC RAM|2MX16|CMOS|BGA|48PIN|PLASTIC |
| HY64UD16322M-DF85I | PSEUDO-STATIC RAM|2MX16|CMOS|BGA|48PIN|PLASTIC |
| HYB-1 | Wideband Impedance Transforming 180 3dB Hybrid 1-300 MHz |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HY64UD16322M-DF70E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PSEUDO-STATIC RAM|2MX16|CMOS|BGA|48PIN|PLASTIC |
| HY64UD16322M-DF70I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| HY64UD16322M-DF85E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PSEUDO-STATIC RAM|2MX16|CMOS|BGA|48PIN|PLASTIC |
| HY64UD16322M-DF85I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| HY64UD16322M-E | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
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