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參數(shù)資料
| 型號(hào)： | HY62SF16806A-SM85I |
| 英文描述： | x16 SRAM |
| 中文描述： | x16的SRAM |
| 文件頁數(shù)： | 6/10頁 |
| 文件大小： | 188K |
| 代理商： | HY62SF16806A-SM85I |
HY62SF16403A Series
Rev.11 / Jun.01
4
AC CHARACTERISTICS
TA = 0
°C to 70°C / -40°C to 85°C (I), unless otherwise specified
85ns
100ns
120ns
#
Symbol
Parameter
Min.
Max.
Min.
Max.
Min
Max.
Unit
1
tRC
Read Cycle Time
85
-
100
-
120
-
ns
2
tAA
Address Access Time
-
85
-
100
-
120
ns
3
tACS
Chip Select Access Time
-
85
-
100
-
120
ns
4
tOE
Output Enable to Output Valid
-
40
-
50
-
60
ns
5
tBA
/LB, /UB Access Time
-
85
-
100
-
120
ns
6
tCLZ
Chip Select to Output in Low Z
10
-
10
-
10
-
ns
7
tOLZ
Output Enable to Output in Low Z
5
-
5
-
5
-
ns
8
tBLZ
/LB, /UB Enable to Output in Low Z
10
-
10
-
10
-
ns
9
tCHZ
Chip Deselection to Output in High Z
0
30
0
30
0
40
ns
10
tOHZ
Out Disable to Output in High Z
0
30
0
30
0
40
ns
11
tBHZ
/LB, /UB Disable to Output in High Z
0
30
0
30
0
40
ns
12
tOH
Output Hold from Address Change
10
-
15
-
15
-
ns
13
tWC
Write Cycle Time
85
-
100
-
100
-
ns
14
tCW
Chip Selection to End of Write
70
-
80
-
100
-
ns
15
tAW
Address Valid to End of Write
70
-
80
-
100
-
ns
16
tBW
/LB, /UB Valid to End of Write
70
-
80
-
100
-
ns
17
tAS
Address Set-up Time
0
-
0
-
0
-
ns
18
tWP
Write Pulse Width
60
-
70
-
85
-
ns
19
tWR
Write Recovery Time
0
-
0
-
0
-
ns
20
tWHZ
Write to Output in High Z
0
25
0
30
0
35
ns
21
tDW
Data to Write Time Overlap
35
-
40
-
50
-
ns
22
tDH
Data Hold from Write Time
0
-
0
-
0
-
ns
23
tOW
Output Active from End of Write
5
-
10
-
10
-
ns
AC TEST CONDITIONS
TA = 0
°C to 70°C / -40°C to 85°C (I), unless otherwise specified
Parameter
Value
Input Pulse Level
0.4V to 1.6V
Input Rise and Fall Time
5ns
Input and Output Timing Reference Level
0.9V
tCLZ, tOLZ, tBLZ, tCHZ, tOHZ, tBHZ, tWHZ, tOW
CL = 5pF + 1TTL Load
Output Load
Others
CL = 30pF + 1TTL Load
AC TEST LOADS
DOUT
3273 Ohm
CL(1)
4091 Ohm
VTM=1.8V
Note 1. Including jig and scope capacitance.
READ CYCLE
WRITE CYCLE
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