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參數(shù)資料
| 型號： | HY62SF16406C |
| 英文描述： | x16|1.8V|85|Super Low Power Slow SRAM - 4M |
| 中文描述： | x16 | 1.8 | 85 |超級低功耗SRAM的速度慢- 4分 |
| 文件頁數(shù)： | 9/10頁 |
| 文件大?。?/td> | 188K |
| 代理商： | HY62SF16406C |
HY62SF16403A Series
Rev.11 / Jun.01
7
Notes:
1. A write occurs during the overlap of a low /WE, a low /CS and a low /UB and/or /LB .
2. tWR is measured from the earlier of /CS, /LB, /UB, or /WE going high to the end of write cycle.
3. During this period, I/O pins are in the output state so that the input signals of opposite phase to the
output must not be applied.
4. If the /CS, /LB and /UB low transition occur simultaneously with the /WE low transition or after the
/WE transition, outputs remain in a high impedance state.
5. Q(data out) is the same phase with the write data of this write cycle.
6. Q(data out) is the read data of the next address.
7. Transition is measured + 200mV from steady state.
This parameter is sampled and not 100% tested.
8. /CS in high for the standby, low for active
/UB and /LB in high for the standby, low for active
DATA RETENTION ELECTRIC CHARACTERISTIC
TA=0
°C to 70°C /-40°C to 85°C (I)
Symbol
Parameter
Test Condition
Min
Typ
1.
Max
Unit
VDR
Vcc for Data Retention
/CS > Vcc - 0.2V or
/UB, /LB > Vcc - 0.2V
1.2
-
2.3
V
SL
-
0.1
3
uA
Iccdr
Data Retention Current
Vcc=1.5V,
/CS > Vcc - 0.2V or
/UB, /LB > Vcc - 0.2V
VIN > Vcc - 0.2V or
VIN < Vss + 0.2V
LL
-
0.1
10
uA
tCDR
Chip Deselect to Data
Retention Time
0
-
ns
tR
Operating Recovery Time
See Data Retention Timing Diagram
tRC
-
ns
Notes:
1. Typical values are under the condition of TA = 25
°C.
2. Typical value are sampled and not 100% tested
DATA RETENTION TIMING DIAGRAM
/CS
VDR
/CS >VCC-0.2V
tCDR
tR
VSS
VCC
1.7V
VIH
DATA RETENTION MODE
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| HY62SF16406C-DM85I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256Kx16bit full CMOS SRAM |
| HY62SF16406C-I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256Kx16bit full CMOS SRAM |
| HY62SF16406C-SM85I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256Kx16bit full CMOS SRAM |
| HY62SF16406D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16|1.8V|70|Super Low Power Slow SRAM - 4M |
| HY62SF16406D-DF | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256Kx16bit full CMOS SRAM |
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