參數(shù)資料
型號: HY5DU283222F-5
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: 128M(4Mx32) GDDR SDRAM
中文描述: 4M X 32 DDR DRAM, 0.9 ns, PBGA144
封裝: 12 X 12 MM, 0.80 MM PITCH, FBGA-144
文件頁數(shù): 26/30頁
文件大?。?/td> 359K
代理商: HY5DU283222F-5
Rev. 1.2/Sep. 02
26
HY5DU283222F
AC CHARACTERISTICS - I (continue)
Parameter
Symbol
36
4
5
Unit
Note
Min
Max
Min
Max
Min
Max
Row Cycle Time
t
RC
61.2
-
60
-
60
-
ns
Auto Refresh Row Cycle Time
t
RFC
64.8
-
64
-
65
-
ns
Row Active Time
t
RAS
43.2
120K
40
120K
40
120K
ns
Row Address to Column Address Delay for Read
t
RCDRD
5
-
5
-
4
-
CK
Row Address to Column Address Delay for Write
t
RCDWR
3
-
3
-
2
-
CK
Row Active to Row Active Delay
t
RRD
2
-
2
-
2
-
CK
Column Address to Column Address Delay
t
CCD
1
-
1
-
1
-
CK
Row Precharge Time
t
RP
5
-
5
-
4
-
CK
Write Recovery Time
t
WR
3
-
3
-
2
-
CK
Last Data-In to Read Command
t
DRL
2
-
2
-
2
-
CK
Auto Precharge Write Recovery + Precharge Time
t
DAL
8
-
8
-
6
-
CK
System Clock Cycle Time
CL=4
t
CK
3.6
6
4
6
-
-
ns
CL=3
-
-
-
-
5
10
ns
Clock High Level Width
t
CH
0.45
0.55
0.45
0.55
0.45
0.55
CK
Clock Low Level Width
t
CL
0.45
0.55
0.45
0.55
0.45
0.55
CK
Data-Out edge to Clock edge Skew
t
AC
-0.9
0.9
-0.9
0.9
-0.9
0.9
ns
DQS-Out edge to Clock edge Skew
t
DQSCK
-0.7
0.7
-0.7
0.7
-0.7
0.7
ns
DQS-Out edge to Data-Out edge Skew
t
DQSQ
-
0.4
-
0.4
-
0.4
ns
Data-Out hold time from DQS
t
QH
tHPmin
-tQHS
-
tHPmin
-tQHS
-
tHPmin
-tQHS
-
ns
1,6
Clock Half Period
t
HP
tCH/L
min
-
tCH/L
min
-
tCH/L
min
-
ns
1,5
Data Hold Skew Factor
t
QHS
-
0.5
-
0.6
-
0.6
ns
6
Input Setup Time
t
IS
0.75
-
0.75
-
1.0
-
ns
2
Input Hold Time
t
IH
0.75
-
0.75
-
1.0
-
ns
2
Write DQS High Level Width
t
DQSH
0.4
0.6
0.4
0.6
0.4
0.6
CK
Write DQS Low Level Width
t
DQSL
0.4
0.6
0.4
0.6
0.4
0.6
CK
Clock to First Rising edge of DQS-In
t
DQSS
0.75
1.25
0.75
1.25
0.75
1.25
CK
Data-In Setup Time to DQS-In (DQ & DM)
t
DS
0.4
-
0.45
-
0.5
-
ns
3
Data-In Hold Time to DQS-In (DQ & DM)
t
DH
0.4
-
0.45
-
0.5
-
ns
3
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