參數(shù)資料
型號: HY5DU283222F-26
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: 128M(4Mx32) GDDR SDRAM
中文描述: 4M X 32 DDR DRAM, 0.9 ns, PBGA144
封裝: 12 X 12 MM, 0.80 MM PITCH, FBGA-144
文件頁數(shù): 2/30頁
文件大小: 359K
代理商: HY5DU283222F-26
Rev. 1.2/Sep. 02
2
HY5DU283222F
Rvision History
Revision
No.
History
Draft
Date
Remark
0.4
1) Part Number changed from HY5DU283222F to HY6U22F
May.01
0.5
1) tAC/tDQSCK, tRCD/tRP parameters each speed changed as the followings
a) tAC : changed from 0.7ns to 0.9ns at 3.3/4/4.5ns
b) tDQSCK : changed from 0.6ns to 0.7ns at 3.3/4/4.5ns
c) tRCD/tRP : changed from 5clk to 6clk at 3.3ns and 4clk to 5clk at 4/4.5ns
1) 222Mhz speed bin removed
2) IDD Specification of 200/250MHz part defined
3) AC parameters of 275MHz part defined
4) ViH/ViL changed Vref+/- 0.35 into Vref +/- 0.45
5)
Part number changed from HY6U22F to HY5DU283222F
1) Pin capacitance defined
a) CK, /CK, All other input-only pins : min 1pF, Max 3PF
b) DQ, DQS, DM : min 3pF, Max 5pF
1) 200MHz tCK Max. changed from 7ns to 10ns
2) Device operation and timing diagram removed
3) tRCD/tRP at 275MHz changed from 6clk to 5clk
4) tRC/tRFC SPEC newly defined
5) 375/350MHz AC parameters defined
1) IDD4 SPEC changed 370mA to 300mA
2) 275/300MHz IDD SPEC defined
3) tRC/tRFC/tRAS SPEC. updated
4) Power dissipation SPEC. changed from 1W to 2W
1) Input leakage current changed from +/-5uA to +/-2uA
Jun. 01
0.6
Oct.01
0.7
Nov.01
0.8
Dec.01
0.9
Dec.01
1.0
May. 02
1.1
1) Defined tPDEX parameter
2) Added AC CHARACTERISTICS-II table
1) Changed V
DD
/V
DDQ
value
- 350/375MHz : Changed from 2.66V/2.80V/2.94V to 2.76V/2.90V/3.05V
(min/typ/max)
2) IDD4 SPEC at 200MHz changed 300mA to 370mA
May. 02
1.2
Sep. 02
相關PDF資料
PDF描述
HY5DU283222F-28 128M(4Mx32) GDDR SDRAM
HY5DU283222F-33 128M(4Mx32) GDDR SDRAM
HY5DU283222F-36 128M(4Mx32) GDDR SDRAM
HY5DU283222F-4 128M(4Mx32) GDDR SDRAM
HY5DU283222F-5 128M(4Mx32) GDDR SDRAM
相關代理商/技術參數(shù)
參數(shù)描述
HY5DU283222F-28 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128M(4Mx32) GDDR SDRAM
HY5DU283222F-33 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128M(4Mx32) GDDR SDRAM
HY5DU283222F-36 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128M(4Mx32) GDDR SDRAM
HY5DU283222F-4 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128M(4Mx32) GDDR SDRAM
HY5DU283222F-5 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128M(4Mx32) GDDR SDRAM