參數(shù)資料
型號(hào): HY5DU283222AF-2
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: 128M(4Mx32) GDDR SDRAM
中文描述: 4M X 32 DDR DRAM, 0.45 ns, PBGA144
封裝: 12 X 12 MM, 0.80 MM PITCH, FBGA-144
文件頁(yè)數(shù): 24/32頁(yè)
文件大小: 355K
代理商: HY5DU283222AF-2
Rev. 0.7 / Jun. 2004
24
HY5DU283222AF
AC Overshoot/Undershoot specifications for Address and Command pins
AC Overshoot/Undershoot specifications for Data, Strobe and Mask Pins
Parameter
Specifications
Maximum peak amplitude allowwed for overshoot
1.5 V
Maximum peak amplitude allowwed for undershoot
1.5 V
The area between the overshoot signal and VDD must be less than or equal to(See below Fig)
4.5 V-nS
The area between the overshoot signal and GND must be less than or equal to(See below Fig)
4.5 V-nS
Parameter
Specifications
Maximum peak amplitude allowwed for overshoot
1.2 V
Maximum peak amplitude allowwed for undershoot
1.2 V
The area between the overshoot signal and VDD must be less than or equal to(See below Fig)
2.4 V-nS
The area between the overshoot signal and GND must be less than or equal to(See below Fig)
2.4 V-nS
+ 5
+ 3
+ 2
+ 1
0
- 1
- 2
- 3
+ 4
0
1
2
3
4
5
6
Time(nS)
Volt
(v)
Max. area = 4.5v-nS
Max. Amplitude = 1.5v
V
DD
Ground
+ 5
+ 3
+ 2
+ 1
0
- 1
- 2
- 3
+ 4
0
1
2
3
4
5
6
Time(nS)
Volt
(v)
Max. area = 2.4 v-nS
Max. Amplitude = 1.2v
V
DD
Ground
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HY5DU283222AF-22 128M(4Mx32) GDDR SDRAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HY5DU283222AF-22 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128M(4Mx32) GDDR SDRAM
HY5DU283222AF-25 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128M(4Mx32) GDDR SDRAM
HY5DU283222AF-28 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128M(4Mx32) GDDR SDRAM
HY5DU283222AF-33 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128M(4Mx32) GDDR SDRAM
HY5DU283222AF-36 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128M(4Mx32) GDDR SDRAM