參數資料
型號: HY5DS113222FM-4
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: 512M(16Mx32) GDDR SDRAM
中文描述: 16M X 32 DDR DRAM, 0.6 ns, PBGA144
封裝: 12 X 12 MM, 0.80 MM PITCH, MO-205DAE, FBGA-144
文件頁數: 1/30頁
文件大小: 431K
代理商: HY5DS113222FM-4
HY5DS113222FM(P)
512M(16Mx32) GDDR SDRAM
HY5DS113222FM(P)
This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any respon-
sibility for use of circuits described. No patent licenses are implied.
Rev. 0.1 / Oct. 2004 1
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PDF描述
HY5DS113222FMP-28 512M(16Mx32) GDDR SDRAM
HY5DS113222FMP-33 512M(16Mx32) GDDR SDRAM
HY5DS113222FMP-36 512M(16Mx32) GDDR SDRAM
HY5DS113222FMP-4 512M(16Mx32) GDDR SDRAM
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相關代理商/技術參數
參數描述
HY5DS113222FMP-28 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512M(16Mx32) GDDR SDRAM
HY5DS113222FMP-33 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512M(16Mx32) GDDR SDRAM
HY5DS113222FMP-36 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512M(16Mx32) GDDR SDRAM
HY5DS113222FMP-4 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512M(16Mx32) GDDR SDRAM
HY5DS283222BF 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128M(4Mx32) GDDR SDRAM