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參數(shù)資料
| 型號： | HY57V561620T-P |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 4Banks x 4M x 16Bit Synchronous DRAM |
| 中文描述： | 16M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 |
| 封裝： | 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 |
| 文件頁數(shù)： | 6/13頁 |
| 文件大?。?/td> | 151K |
| 代理商： | HY57V561620T-P |
HY57V561620(L)T
Revision 1.8 / Apr.01
DC CHARACTERISTICS II
(TA=0
°
C
to 70
°
C
, V
DD
=3.3V
±
0.3V, V
SS
=0V)
Note :
1. I
DD1
and I
DD4
depend on output loading and cycle rates. Specified values are measured with the output open.
2. Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II
3. HY57V561620T-HP/H/8/P/S
4. HY57V561620LT-HP/H/8/P/S
Parameter
Symbol
Test Condition
Speed
Unit
Note
-HP
-H
-8
-P
-S
Operating Current
IDD1
Burst Length=1, One bank active
tRAS
≥
tRAS(min),tRP
≥
tRP(min), IO=0mA
120
120
110
100
100
mA
1
Precharge Standby Current
in power down mode
IDD2P
CKE
≤
VIL(max), tCK = min.
2
mA
IDD2PS
CKE
≤
VIL(max), tCK =
∞
2
Precharge Standby Current
in non power down mode
IDD2N
CKE
≥
VIH(min), CS
≥
VIH(min), tCK = min
Input signals are changed one time during 2clks.
All other pins
≥
VDD-0.2V or
≤
0.2V
20
mA
IDD2NS
CKE
≥
VIH(min), tCK =
∞
Input signals are stable.
10
Active Standby Current
in power down mode
IDD3P
CKE
≤
VIL(max), tCK = min
3
mA
IDD3PS
CKE
≤
VIL(max), tCK =
∞
3
Active Standby Current
in non power down mode
IDD3N
CKE
≥
VIH(min), CS
≥
VIH(min), tCK = min
Input signals are changed one time during 2clks.
All other pins
≥
VDD-0.2V or
≤
0.2V
25
mA
IDD3NS
CKE
≥
VIH(min), tCK =
∞
Input signals are stable
15
Burst Mode Operating
Current
IDD4
tCK
≥
tCK(min),
tRAS
≥
tRAS(min), IO=0mA
All banks active
150
150
140
120
120
mA
1
Auto Refresh Current
IDD5
tRRC
≥
tRRC(min), All banks active
260
260
260
250
250
mA
2
Self Refresh Current
IDD6
CKE
≤
0.2V
3
mA
3
1.5
mA
4
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|---|---|
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| HY57V56820B | 4 Banks x 8M x 8Bit Synchronous DRAM |
| HY57V56820BL | 4 Banks x 8M x 8Bit Synchronous DRAM |
| HY57V641620HGLT-8I | CAP SMD 0805 .01UF 50V 5% |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY57V561620T-S | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4Banks x 4M x 16Bit Synchronous DRAM |
| HY57V561620T-SI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SDRAM |
| HY57V56420ALT-10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 SDRAM |
| HY57V56420ALT-6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 SDRAM |
| HY57V56420ALT-8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 SDRAM |
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