參數(shù)資料
型號(hào): HY29LV800T-90
廠商: Hynix Semiconductor Inc.
英文描述: 8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory
中文描述: 8兆位(100萬(wàn)x 8/512K × 16)低壓快閃記憶體
文件頁(yè)數(shù): 29/40頁(yè)
文件大小: 556K
代理商: HY29LV800T-90
29
Rev. 1.0/Nov. 01
HY29LV800
AC CHARACTERISTICS
Notes:
1. PA = Program Address, PD = Program Data, D
is the true data at the program address.
2. Commands shown are for Word mode operation.
3. V
CC
shown only to illustrate t
VCS
measurement references. It cannot occur as shown during a valid command sequence.
Figure 19. Program Operation Timings
Addresses
CE#
t
WC
0x555
PA
PA
PA
OE#
t
AS
t
AH
t
WPH
t
WP
t
GHWL
t
CS
WE#
Data
t
DS
t
DH
0xA0
PD
Status
t
WHWH1
RY/BY#
t
BUSY
t
RB
t
VCS
V
CC
Program Command Sequence (last two cycles)
Read Status Data (last two cycles)
D
OUT
t
CH
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