參數(shù)資料
型號(hào)： HY29LV800T-70I
廠商： Hynix Semiconductor Inc.
英文描述： 8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory
中文描述： 8兆位（100萬x 8/512K × 16）低壓快閃記憶體
文件頁(yè)數(shù)： 32/40頁(yè)
文件大小： 556K
代理商： HY29LV800T-70I
32
Rev. 1.0/Nov. 01
HY29LV800
AC CHARACTERISTICS
Notes:
1. The system may use CE# or OE# to toggle DQ[2] and DQ[6]. DQ[2] toggles only when read at an address within an
erase-suspended sector.
Figure 23. DQ[2] and DQ[6] Operation
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Sector Protect and Unprotect, Temporary Sector Unprotect
Notes:
1. Not 100% tested.
Figure 24. Temporary Sector Unprotect Timings
Erase
Complete
WE#
DQ[6]
DQ[2]
Enter Automatic
Erase
Erase
Erase
Suspend
Read
Enter Erase
Suspend
Program
Erase
Suspend
Program
Erase
Suspend
Read
Erase
Resume
Erase
Erase
Suspend
t
VIDR
RY/BY#
WE#
CE#
RESET#
V
ID
0 or 3V
t
RSP
t
VIDR
0 or 3V
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HY29LV800T-90I 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory
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