參數(shù)資料
型號: HY29LV800B-55I
廠商: Hynix Semiconductor Inc.
英文描述: 8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory
中文描述: 8兆位(100萬x 8/512K × 16)低壓快閃記憶體
文件頁數(shù): 35/40頁
文件大?。?/td> 556K
代理商: HY29LV800B-55I
35
Rev. 1.0/Nov. 01
HY29LV800
Latchup Characteristics
Notes:
1. Includes all pins except V
CC
. Test conditions: V
CC
= 3.0V, one pin at a time.
TSOP and PSOP Pin Capacitance
l
b
m
y
S
C
N
I
a
C
t
p
n
C
T
U
O
t
p
O
C
2
N
I
l
r
o
C
Notes:
1. Sampled, not 100% tested.
2. Test conditions: T
A
= 25
o
C, f = 1.0 MHz.
n
l
)
T
E
/
n
o
o
S
E
R
V
S
S
p
c
V
S
d
n
s
e
D
m
u
m
i
M
m
u
m
i
a
M
t
U
o
e
a
#
E
O
o
e
p
s
e
p
s
e
h
w
A
g
h
w
e
t
e
g
a
v
u
a
v
e
C
t
p
n
n
t
p
n
V
C
C
n
S
O
/
e
c
x
e
s
n
n
,
n
g
0
-
5
1
V
s
n
O
o
0
0
1
-
-
V
C
C
0
0
+
0
V
0
1
A
m
r
e
t
m
e
c
n
a
a
p
a
C
a
c
r
a
n
P
p
u
t
S
=
=
=
t
e
T
p
y
6
T
x
a
M
5
1
9
t
U
F
p
F
p
F
p
a
a
p
p
a
C
n
V
N
V
O
V
N
I
0
e
a
a
T
U
0
5
5
2
e
c
n
I
0
Data Retention
r
e
t
m
a
r
a
P
s
n
o
n
o
C
o
0
5
1
o
5
2
1
t
e
T
m
u
m
0
1
0
2
i
M
t
U
s
e
Y
s
e
Y
e
m
i
n
o
e
R
a
D
n
r
P
m
u
m
i
M
C
C
相關(guān)PDF資料
PDF描述
HY29LV800B-70 8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory
HY29LV800B-70I 8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory
HY29LV800B-90 8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory
HY29LV800B-90I 8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory
HY29LV800T-55 8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HY29LV800B-70 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory
HY29LV800B-70I 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory
HY29LV800B-90 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory
HY29LV800B-90I 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory
HY29LV800T-55 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory