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參數(shù)資料
| 型號： | HX6656-QRC |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 32K x 8 ROM-SOI |
| 中文描述： | 32K的× 8 ROM的絕緣硅 |
| 文件頁數(shù)： | 10/12頁 |
| 文件大?。?/td> | 155K |
| 代理商： | HX6656-QRC |
HX6656
7
Read Cycle
The ROM is asynchronous in operation, allowing the read
cycle to be controlled by address, chip select (NCS), or chip
enable (CE) (refer to Read Cycle timing diagram). To
perform a valid read operation, both chip select and output
enable (NOE) must be low and chip enable must be high.
The output drivers can be controlled independently by the
NOE signal. Consecutive read cycles can be executed with
NCS held continuously low, and with CE held continuously
high, and toggling the addresses.
For an address activated read cycle, NCS and CE must be
valid prior to or coincident with the activating address edge
transition(s). Any amount of toggling or skew between
address edge transitions is permissible; however, data
outputs will become valid TAVQV time following the latest
occurring address edge transition. The minimum address
activated read cycle time is TAVAV. When the ROM is
operated at the minimum address activated read cycle
time, the data outputs will remain valid on the I/O until
TAXQX time following the next sequential address transi-
tion.
To control a read cycle with NCS, all addresses and CE
must be valid prior to or coincident with the enabling NCS
edge transition. Address or CE edge transitions can occur
later than the specified setup times to NCS, however, the
valid data access time will be delayed. Any address edge
transition, which occurs during the time when NCS is low,
will initiate a new read access, and data outputs will not
become valid until TAVQV time following the address edge
transition. Data outputs will enter a high impedance state
TSHQZ time following a disabling NCS edge transition.
To control a read cycle with CE, all addresses and NCS
must be valid prior to or coincident with the enabling CE
edge transition. Address or NCS edge transitions can
occur later than the specified setup times to CE; however,
the valid data access time will be delayed. Any address
edge transition which occurs during the time when CE is
high will initiate a new read access, and data outputs will
not become valid until TAVQV time following the address
edge transition. Data outputs will enter a high impedance
state TELQZ time following a disabling CE edge transition.
DYNAMIC ELECTRICAL CHARACTERISTICS
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PDF描述 |
|---|---|
| HX6656-SFC | 32K x 8 ROM-SOI |
| HX6656-SFT | 32K x 8 ROM-SOI |
| HX6656-SHC | 32K x 8 ROM-SOI |
| HX6656-SHT | 32K x 8 ROM-SOI |
| HX6656-SNC | 32K x 8 ROM-SOI |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HX6656-QRT | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:32K x 8 ROM-SOI |
| HX6656RBFC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:32K x 8 ROM-SOI |
| HX6656RBFT | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:32K x 8 ROM-SOI |
| HX6656RBHC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:32K x 8 ROM-SOI |
| HX6656RBHT | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:32K x 8 ROM-SOI |
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