- 您現(xiàn)在的位置：買賣IC網 > PDF目錄367266 > HUFA76633S3ST TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 38A I(D) | TO-263AB PDF資料下載
參數(shù)資料
| 型號： | HUFA76633S3ST |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 38A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 100V的五（巴西）直| 38A條（丁）|對263AB |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 657K |
| 代理商： | HUFA76633S3ST |
2001 Fairchild Semiconductor Corporation
HUFA75639S3R4851 Rev. A
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. PEAK CURRENT CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
175
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
0
10
20
30
40
50
60
25
50
75
100
125
150
175
0.01
0.1
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
SINGLE PULSE
Z
θ
J
,
T
t, RECTANGULAR PULSE DURATION (s)
2
NOTES:
DUTY FACTOR: D = t
1
/t
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
1000
10
1
10
0
10
-1
10
-2
10
-3
10
-4
10
-5
10
100
T
C
= 25
o
C
I = I
25
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
V
GS
= 10V
I
D
,
t, PULSE WIDTH (s)
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
HUFA75639S3R4851
相關PDF資料 |
PDF描述 |
|---|---|
| HUFA76639S3ST | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 51A I(D) | TO-263AB |
| HUFA76645S3ST | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 75A I(D) | TO-263AB |
| HUFA75229P3 | TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 44A I(D) | TO-220AB |
| HUFA75321S3ST | TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 35A I(D) | TO-263AB |
| HUFA75333S3ST | TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 66A I(D) | TO-263AB |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HUFA76639P3 | 功能描述:MOSFET 50a 100V 0.027 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA76639S3S | 功能描述:MOSFET 50a 100V 0.027 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA76639S3ST | 功能描述:MOSFET 50a 100V 0.027 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA76645P3 | 功能描述:MOSFET 75a 100V 0.015 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA76645S3S | 功能描述:MOSFET 75a 100V 0.015 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。