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參數(shù)資料
| 型號(hào)： | HUFA75631SK8T |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5.5A I(D) | SO |
| 中文描述： | 5.5 A, 100 V, 0.039 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 251K |
| 代理商： | HUFA75631SK8T |
2001 Fairchild Semiconductor Corporation
HUFA75631SK8 Rev. B
HUFA75631SK8
5.5A, 100V, 0.039 Ohm, N-Channel,
UltraFET Power MOSFET
Packaging
Symbol
Features
Ultra Low On-Resistance
- r
DS(ON)
= 0.039
,
V
GS
=
10V
Simulation Models
- Temperature Compensated PSPICE and SABER
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
Peak Current vs Pulse Width Curve
UIS Rating Curve
Ordering Information
Absolute Maximum Ratings
T
A
= 25
o
C, Unless Otherwise Specified
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
JEDEC MS-012AA
BRANDING DASH
1
2
3
4
5
DRAIN (8)
SOURCE (1)
DRAIN (7)
DRAIN (6)
DRAIN (5)
SOURCE (3)
GATE (4)
SOURCE (2)
PART NUMBER
PACKAGE
BRAND
HUFA75631SK8
MS-012AA
75631SK8
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUFA75631SK8T.
HUFA75631SK8
100
100
±
20
UNITS
V
V
V
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
A
= 25
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
A
= 100
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
NOTES:
1. T
J
= 25
o
C to 150
o
C.
2. 50
o
C/W measured using FR-4 board with 0.76 in
2
(490.3 mm
2
) copper pad at 10 second.
3. 152
o
C/W measured using FR-4 board with 0.054 in
2
(34.8 mm
2
) copper pad at 1000 seconds
4. 189
o
C/W measured using FR-4 board with 0.0115 in
2
(7.42 mm
2
) copper pad at 1000 seconds
5.5
3.5
Figure 4
A
A
Figures 6, 14, 15
2.5
20
-55 to 150
W
mW/
o
C
o
C
300
260
o
C
o
C
CAUTION:
Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Data Sheet
December 2001
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HUFA75631P3 | 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs |
| HUFA75631SK8 | 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET |
| HUFA75631S3ST | 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs |
| HUFA75637P3 | 44A, 100V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET |
| HUFA75637S3S | 44A, 100V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUFA75637P3 | 功能描述:MOSFET 44a 100V 0.030 Ohm N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA75637S3S | 功能描述:MOSFET 44a 100V 0.030 Ohm N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA75637S3ST | 功能描述:MOSFET 44a 100V 0.030 Ohm N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA75639G3 | 功能描述:MOSFET 56a 100V N-Ch UltraFET 0.025 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA75639P3 | 功能描述:MOSFET 56a 100V N-Ch UltraFET 0.025 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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