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參數(shù)資料
| 型號： | HUF76639S3S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| 中文描述： | 51 A, 100 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 218K |
| 代理商： | HUF76639S3S |
2001 Fairchild Semiconductor Corporation
HUF76639P3, HUF76639S3S Rev. B
HUF76639P3, HUF76639S3S
50A, 100V, 0.027 Ohm, N-Channel, Logic
Level UltraFET Power MOSFET
Packaging
Symbol
Features
Ultra Low On-Resistance
- r
DS(ON)
= 0.026
,
V
GS
=
10V
- r
DS(ON)
= 0.027
,
V
GS
=
5V
Simulation Models
- Temperature Compensated PSPICE and SABER
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
Peak Current vs Pulse Width Curve
UIS Rating Curve
Switching Time vs R
GS
Curves
Ordering Information
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
JEDEC TO-220AB
JEDEC TO-263AB
DRAIN
(FLANGE)
DRAIN
GATE
SOURCE
HUF76639P3
GATE
SOURCE
DRAIN
(FLANGE)
HUF76639S3S
D
G
S
PART NUMBER
PACKAGE
BRAND
HUF76639P3
TO-220AB
76639P
HUF76639S3S
TO-263AB
76639S
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF76639S3ST.
HUF76639P3, HUF76639S3S
100
100
±
16
UNITS
V
V
V
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 100
o
C, V
GS
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 100
o
C, V
GS
= 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
NOTES:
1. T
J
= 25
o
C to 150
o
C.
CAUTION:
Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
50
51
35
34
Figure 4
A
A
A
A
Figures 6, 17, 18
180
1.2
-55 to 175
W
W/
o
C
o
C
300
260
o
C
o
C
Data Sheet
December 2001
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HUF76639S3ST | 功能描述:MOSFET 50a 100V 0.027 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76639S3ST_ SB82190 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUF76639S3ST_F085 | 功能描述:MOSFET 50A, 100V, 0.026 Ohm N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76639S3ST_R4882 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUF76639S3ST_SB82251 | 制造商:Fairchild Semiconductor Corporation 功能描述:FSCHUF76639S3ST_SB82251 50A,100V, 0.027 |
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