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  • 參數(shù)資料
    型號(hào): HUF76407D3
    廠商: FAIRCHILD SEMICONDUCTOR CORP
    元件分類(lèi): 功率晶體管
    英文描述: 11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
    中文描述: 12 A, 60 V, 0.117 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
    文件頁(yè)數(shù): 5/12頁(yè)
    文件大?。?/td> 375K
    代理商: HUF76407D3
    5
    FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
    JUNCTION TEMPERATURE
    FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
    VOLTAGE vs JUNCTION TEMPERATURE
    FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
    NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
    FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT
    GATE CURRENT
    FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
    FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
    Typical Performance Curves
    (Continued)
    0.6
    0.8
    1.0
    1.2
    -80
    -40
    0
    40
    80
    120
    160
    N
    T
    J
    , JUNCTION TEMPERATURE (
    o
    C)
    V
    GS
    = V
    DS
    , I
    D
    = 250
    μ
    A
    T
    0.9
    1.0
    1.1
    1.2
    -80
    -40
    0
    40
    80
    120
    160
    T
    J
    , JUNCTION TEMPERATURE (
    o
    C)
    N
    B
    I
    D
    = 250
    μ
    A
    5
    10
    100
    1000
    0.1
    1.0
    10
    60
    C
    V
    DS
    , DRAIN TO SOURCE VOLTAGE (V)
    V
    GS
    = 0V, f = 1MHz
    C
    ISS
    =
    C
    GS
    + C
    GD
    C
    OSS
    C
    DS
    + C
    GD
    C
    RSS
    =
    C
    GD
    0
    2
    4
    6
    8
    10
    0
    2
    4
    6
    8
    10
    V
    G
    ,
    V
    DD
    = 30V
    Q
    g
    , GATE CHARGE (nC)
    I
    D
    = 3.8A
    I
    D
    = 1.0A
    WAVEFORMS IN
    DESCENDING ORDER:
    20
    30
    40
    50
    0
    10
    20
    30
    40
    50
    0
    S
    R
    GS
    , GATE TO SOURCE RESISTANCE (
    )
    V
    GS
    = 4.5V, V
    DD
    = 30V, I
    D
    = 1.0A
    t
    d(OFF)
    t
    r
    t
    f
    t
    d(ON)
    10
    20
    40
    60
    80
    0
    10
    20
    30
    40
    50
    0
    S
    R
    GS
    , GATE TO SOURCE RESISTANCE (
    )
    V
    GS
    = 10V, V
    DD
    = 30V, I
    D
    = 3.8A
    t
    d(OFF)
    t
    r
    t
    d(ON)
    t
    f
    HUF76407DK8
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    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
    HUF76407D3S 功能描述:MOSFET 11a 60V 0.107 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
    HUF76407D3ST 功能描述:MOSFET 11a 60V 0.107 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
    HUF76407DK8 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET
    HUF76407DK8T 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
    HUF76407DK8T_R4810 制造商:Rochester Electronics LLC 功能描述:- Bulk