型號: | HUF75945S3ST |
廠商: | FAIRCHILD SEMICONDUCTOR CORP |
元件分類: | 功率晶體管 |
英文描述: | 38A, 200V, 0.071 Ohm, N-Channel, UltraFET Power MOSFETs |
中文描述: | 38 A, 200 V, 0.071 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
文件頁數(shù): | 1/10頁 |
文件大?。?/td> | 209K |
代理商: | HUF75945S3ST |
相關PDF資料 |
PDF描述 |
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HUF76009D3S | 20A, 20V, 0.027 Ohm, N-Channel, Logic Level Power MOSFETs |
HUF76009D3S | 20A, 20V, 0.027 Ohm, N-Channel, Logic Level Power MOSFETs |
HUF76009D3ST | TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 20A I(D) | TO-252AA |
HUF76009P3 | 20A, 20V, 0.027 Ohm, N-Channel, Logic Level Power MOSFETs |
HUF76009P3 | RF/Coaxial Connector; RF Coax Type:TNC; Impedance:50ohm; Body Style:Straight Flanged Jack; Body Plating:Nickel RoHS Compliant: Yes |
相關代理商/技術參數(shù) |
參數(shù)描述 |
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HUF76009D3S | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:20A, 20V, 0.027 Ohm, N-Channel, Logic Level Power MOSFETs |
HUF76009D3ST | 功能描述:MOSFET 20a 20V N-Ch Logic Level 0.027Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
HUF76009P3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
HUF76013D3S | 功能描述:MOSFET 20a 20V N-Ch Logic Level 0.022Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
HUF76013D3ST | 功能描述:MOSFET 20a 20V N-Ch Logic Level 0.022Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |