- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄367264 > HUF75545S3ST TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 75A I(D) | TO-263AB PDF資料下載
參數(shù)資料
| 型號(hào)： | HUF75545S3ST |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 75A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 80V的五（巴西）直| 75A條（?。﹟對(duì)263AB |
| 文件頁(yè)數(shù)： | 4/10頁(yè) |
| 文件大小： | 215K |
| 代理商： | HUF75545S3ST |
2001 Fairchild Semiconductor Corporation
HUF75307P3, HUF75307D3, HUF75307D3S Rev. B
FIGURE 4. PEAK CURRENT CAPABILITY
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
Typical Performance Curves
(Continued)
100
10
1
10
0
10
-1
10
-2
10
-3
10
-4
10
-5
10
200
T
C
= 25
o
C
I = I
25
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
V
GS
= 10V
I
D
,
t, PULSE WIDTH (s)
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
1
10
100
10
100
0.1
1
200
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
T
J
= MAX RATED
T
C
= 25
o
C
100
μ
s
10ms
1ms
V
DSS(MAX)
= 55V
LIMITED BY r
DS(ON)
AREA MAY BE
10
100
0.01
0.1
1
10
0.001
1
200
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
5
10
15
20
25
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2
3
4
5
0
0
I
D
,
V
GS
= 6V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
C
V
GS
= 5V
V
GS
= 7V
V
GS
= 10V
V
GS
= 20V
5
10
15
20
25
1.5
3.0
4.5
6.0
7.5
0
0
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
175
o
C
-55
o
C
25
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
HUF75307P3, HUF75307D3, HUF75307D3S
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HUF75631S3S | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 33A I(D) | TO-263AB |
| HUF75631SK8T | 30V N-Channel PowerTrench MOSFET |
| HUF75637P3T | 30V N-Channel PowerTrench MOSFET |
| HUF75637S3ST | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 44A I(D) | TO-263AB |
| HUF75639S3ST | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 53A I(D) | TO-263AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF75545S3ST_F101 | 制造商:Fairchild Semiconductor Corporation 功能描述:HUF75545S3S Series N-Channel 80 V 0.01 Ohm UltraFET Power Mosfet - TO-263AB 制造商:FAIRCHILD 功能描述:0 |
| HUF75545S3ST_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUF7554S3S | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HUF75617D3 | 功能描述:MOSFET 16a 100V N-Ch 0.090Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75617D3S | 功能描述:MOSFET 16a 100V N-Ch 0.090Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。