參數(shù)資料
型號: HUF75333S3
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 56A I(D) | TO-262AA
中文描述: 晶體管| MOSFET的| N溝道| 55V的五(巴西)直|第56A條(?。﹟對262AA
文件頁數(shù): 5/10頁
文件大?。?/td> 215K
代理商: HUF75333S3
2001 Fairchild Semiconductor Corporation
HUF75307P3, HUF75307D3, HUF75307D3S Rev. B
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
Typical Performance Curves
(Continued)
1.0
1.5
2.0
2.5
-40
0
40
80
120
160
200
0.5
-80
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 15A
N
T
J
, JUNCTION TEMPERATURE (
o
C)
T
V
GS
= V
DS
, I
D
= 250
μ
A
0.8
1.0
1.2
-40
0
40
80
120
160
200
-80
0.6
1.0
1.1
1.2
-40
0
40
80
120
160
200
-80
0.9
T
J
, JUNCTION TEMPERATURE (
o
C)
N
I
D
= 250
μ
A
B
100
200
300
400
10
20
30
40
50
60
0
0
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
C
OSS
C
RSS
V
GS
= 0, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
2
4
6
8
10
2
4
6
8
10
0
0
V
G
,
V
DD
= 30V
Q
g
, GATE CHARGE (nC)
I
D
= 15A
I
D
= 12A
I
D
= 7.5A
I
D
= 4A
WAVEFORMS IN
DESCENDING ORDER:
HUF75307P3, HUF75307D3, HUF75307D3S
相關(guān)PDF資料
PDF描述
HUF75333S3ST TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 66A I(D) | TO-263AB
HUF75337S3 TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 62A I(D) | TO-262AA
HUF75337S3ST TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 75A I(D) | TO-263AB
HUF75339S3 TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 70A I(D) | TO-262AA
HUF75339S3ST TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 75A I(D) | TO-263AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF75333S3S 功能描述:MOSFET TO-263 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75333S3ST 功能描述:MOSFET 55V NCh Power MOSFET UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75337G3 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs
HUF75337P3 功能描述:MOSFET 75a 55V 0.014Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75337P3_Q 功能描述:MOSFET 75a 55V 0.014Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube