參數(shù)資料
型號(hào)： HUF75321D3ST
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 20A I(D) | TO-252AA
中文描述： 晶體管| MOSFET的| N溝道| 55V的五（巴西）直| 20A條（?。﹟對(duì)252AA
文件頁(yè)數(shù)： 5/10頁(yè)
文件大小： 215K
代理商： HUF75321D3ST
2001 Fairchild Semiconductor Corporation
HUF75307P3, HUF75307D3, HUF75307D3S Rev. B
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
Typical Performance Curves
(Continued)
1.0
1.5
2.0
2.5
-40
0
40
80
120
160
200
0.5
-80
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 15A
N
T
J
, JUNCTION TEMPERATURE (
o
C)
T
V
GS
= V
DS
, I
D
= 250
μ
A
0.8
1.0
1.2
-40
0
40
80
120
160
200
-80
0.6
1.0
1.1
1.2
-40
0
40
80
120
160
200
-80
0.9
T
J
, JUNCTION TEMPERATURE (
o
C)
N
I
D
= 250
μ
A
B
100
200
300
400
10
20
30
40
50
60
0
0
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
C
OSS
C
RSS
V
GS
= 0, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
2
4
6
8
10
2
4
6
8
10
0
0
V
G
,
V
DD
= 30V
Q
g
, GATE CHARGE (nC)
I
D
= 15A
I
D
= 12A
I
D
= 7.5A
I
D
= 4A
WAVEFORMS IN
DESCENDING ORDER:
HUF75307P3, HUF75307D3, HUF75307D3S
相關(guān)PDF資料
PDF描述
HUF75321S3 TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 31A I(D) | TO-262AA
HUF75321S3ST TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 31A I(D) | TO-263AB
HUF75329D3ST TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 20A I(D) | TO-252AA
HUF75329S3ST TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 42A I(D) | TO-263AB
HUF75332S3 TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 52A I(D) | TO-262AA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF75321D3ST_S2457 制造商:Rochester Electronics LLC 功能描述:- Bulk
HUF75321P3 功能描述:MOSFET 35A 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75321S3 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75321S3S 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75321S3ST 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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