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參數(shù)資料
| 型號(hào)： | HUF75229P3 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 44A, 50V, 0.022 Ohm, N-Channel UltraFET Power MOSFET |
| 中文描述： | 44 A, 50 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大小： | 135K |
| 代理商： | HUF75229P3 |
5
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
Test Circuits and Waveforms
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
FIGURE 16. GATE CHARGE TEST CIRCUIT
FIGURE 17. GATE CHARGE WAVEFORM
Typical Performance Curves
(Continued)
1500
600
0
0
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
20
30
40
50
C
900
300
C
ISS
C
OSS
C
RSS
V
GS
= 0V, f = 1MHz
1200
10
8
6
4
0
V
G
,
V
DD
= 30V
2
15
20
35
0
Q
g
, GATE CHARGE (nC)
5
10
I
D
= 44A
I
D
= 27A
I
D
= 11A
WAVEFORMS IN
DESCENDING ORDER:
25
30
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
R
L
V
GS
+
-
V
DS
V
DD
DUT
I
G(REF)
V
DD
Q
g(TH)
V
GS
= 2V
Q
g(10)
V
GS
= 10V
Q
g(TOT)
V
GS
= 20V
V
DS
V
GS
I
g(REF)
0
0
HUF75229P3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HUF75307D3 | 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs |
| HUF75307D3S | 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs |
| HUF75307P3 | 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs |
| HUF75307D3 | 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs |
| HUF75307D3S | 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF75229P3_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUF75307D3 | 功能描述:MOSFET 15a 55V N-Ch UltraFET 0.099 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75307D3 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N I-PAK |
| HUF75307D3S | 功能描述:MOSFET TO-252 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75307D3ST | 功能描述:MOSFET 15a 55V N-Ch UltraFET 0.099 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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