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| 型號(hào)： | HTT1213S |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大小： | 45K |
| 代理商： | HTT1213S |
HTT1213S
Rev.0, Aug. 2001, page 2 of 7
Absolute Maximum Ratings
(Ta = 25
°
C)
Ratings
Item
Symbol
Q1 and Q2
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
15
V
Collector to emitter voltage
4
V
Emitter to base voltage
1.5
V
Collector current
50
mA
Collector power dissipation
Total 220*
mW
°
C
Junction temperature
150
Storage temperature
*Value on PCB. (FR–4 (13 x 13 x 0.635 mm) )
Tstg
–55 to
+
150
°
C
Electrical Characteristics (Q1 and Q2)
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
15
V
I
C
= 10
μ
A, I
E
= 0
Collector cutoff current
I
CBO
I
CEO
I
EBO
h
FE
0.1
mA
V
CB
= 15 V, I
E
= 0
V
CE
= 4 V, R
BE
= infinite
V
EB
= 0.8 V, I
C
= 0
V
CE
= 1 V, I
C
= 5 mA
V
= 1 V, f = 1 MHz
Emitter ground
Collector cutoff current
1
mA
Emitter cutoff current
0.2
mA
DC current transfer ratio
100
130
170
Reverse transfer capacitance C
re
0.30
0.45
pF
Gain bandwidth product
f
T
|S
21
|
NF
10
13
GHz
V
CE
= 1 V, I
C
= 5 mA, f = 1 GHz
V
= 1 V, I
= 5 mA,
f = 900 MHz,
Γ
S
=
Γ
L
= 50
Forward transfer coefficient
2
13
16
dB
Noise figure
1.0
2.0
dB
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