參數(shù)資料
型號(hào): HSMS-286x
英文描述: Surface Mount Microwave Schottky Detector Diodes
中文描述: 表面安裝微波肖特基二極管探測(cè)器
文件頁(yè)數(shù): 3/6頁(yè)
文件大小: 153K
代理商: HSMS-286X
3
Equivalent Circuit Model
HSMS-2850, HSMS-2860;
Singles
SPICE Parameters
Parameter
B
V
C
J0
E
G
I
BV
I
S
N
R
S
P
B
(VJ)
P
T
(XTI)
M
Units
V
pF
eV
A
A
HSMS-285X
3.8
0.18
0.69
3 x 10E-4
3 x 10E-6
1.06
25
0.35
2
0.5
HSMS-286X
7.0
0.18
0.69
10E-5
5.0 x 10E-8
1.08
5.0
0.65
2
0.5
V
0.18 pF
R
j
R
S
0.08 pF
2 nH
R
= 8.33 X 10
-5
nT
I
b
+ I
s
where
I
b
= externally applied bias current in amps
I
s
= saturation current (see table of SPICE parameters)
T
= temperature,
°
K
n = identity factor (see table of SPICE parameters)
R
S
= series resistance (see Table of SPICE parameters)
ESD WARNING: Handling Precautions Should Be Taken To Avoid Static Discharge.
Absolute Maximum Ratings, T
a
= +25
°
C, Single Diode
Symbol
Parameter
Absolute Maximum
[1]
HSMS-285x
75 mW
2.0 V
150
°
C
-65
°
C to 150
°
C
-65
°
C to 150
°
C
HSMS-286x
250 mW
4.0 V
150
°
C
-65
°
C to 150
°
C
-65
°
C to 150
°
C
P
T
P
IV
T
J
T
STG
T
OP
Total Device Dissipation
[2]
Peak Inverse Voltage
Junction Temperature
Storage Temperature
Operating Temperature
Notes:
1. Operation in excess of any one of these conditions may result in
permanent damage to the device.
2. CW Power Dissipation at T
LEAD
= +25
°
C. Derate linearly to zero at
maximum rated temperature.
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