參數(shù)資料
型號： HSMS-282F-TR1
廠商： AGILENT TECHNOLOGIES INC
元件分類： 參考電壓二極管
英文描述： SILICON, C BAND, MIXER DIODE
封裝： SC-70, 3 PIN
文件頁數(shù)： 6/12頁
文件大小： 132K
代理商： HSMS-282F-TR1
3
Quad Capacitance
Capacitance of Schottky diode
quads is measured using an
HP4271 LCR meter. This
instrument effectively isolates
individual diode branches from
the others, allowing accurate
capacitance measurement of each
branch or each diode. The
conditions are: 20 mV R.M.S.
voltage at 1 MHz. Agilent defines
this measurement as “CM”, and it
is equivalent to the capacitance of
the diode by itself. The equivalent
diagonal and adjacent capaci-
tances can then be calculated by
the formulas given below.
In a quad, the diagonal capaci-
tance is the capacitance between
points A and B as shown in the
figure below. The diagonal
capacitance is calculated using
the following formula
C
1 x C2
C
3 x C4
C
DIAGONAL = _______ + _______
C
1 + C2
C
3 + C4
C1
C2
C4
C3
A
B
C
The equivalent adjacent
capacitance is the capacitance
between points A and C in the
figure below. This capacitance is
calculated using the following
formula
1
C
ADJACENT = C1 + ____________
1
–– + –– + ––
C
2
C
3
C
4
This information does not apply
to cross-over quad diodes.
SPICE Parameters
Parameter
Units
HSMS-282x
B
V
V15
C
J0
pF
0.7
E
G
eV
0.69
I
BV
A1E - 4
I
S
A
2.2E - 8
N
1.08
R
S
6.0
P
B
V
0.65
P
T
2
M
0.5
Cj
Rj
RS
Rj =
8.33 X 10
-5 nT
Ib + Is
where
Ib = externally applied bias current in amps
Is = saturation current (see table of SPICE parameters)
T = temperature,
°K
n = ideality factor (see table of SPICE parameters)
Note:
To effectively model the packaged HSMS-282x product,
please refer to Application Note AN1124.
RS = series resistance (see Table of SPICE parameters)
C j = junction capacitance (see Table of SPICE parameters)
Linear Equivalent Circuit Model
Diode Chip
ESD WARNING:
Handling Precautions Should Be Taken To Avoid Static Discharge.
相關(guān)PDF資料
PDF描述
HSMS-2850#T31 SILICON, UHF-C BAND, MIXER DIODE
HSMS-2855#T30 SILICON, UHF-C BAND, MIXER DIODE
HSMS-2863-TR2 SILICON, UHF-C BAND, MIXER DIODE
HSS104TA-E 0.11 A, SILICON, SIGNAL DIODE, DO-34
HSS81TA-E 0.15 A, SILICON, SIGNAL DIODE, DO-34
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HSMS-282F-TR1G 功能描述:肖特基二極管與整流器 15 VBR 1 pF RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
HSMS-282F-TR2 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Surface Mount RF Schottky Barrier Diodes
HSMS-282F-TR2G 功能描述:肖特基二極管與整流器 15 VBR 1 pF RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
HSMS282K 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Surface Mount Zero Bias Schottky
HSMS-282K 制造商:Avago Technologies 功能描述:DIODE SCHOTTKY RF SOT-363
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