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參數(shù)資料
| 型號： | HSMS-281K-TR2 |
| 英文描述： | Surface Mount RF Schottky Barrier Diodes |
| 中文描述： | 表面貼裝射頻肖特基二極管 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 144K |
| 代理商： | HSMS-281K-TR2 |
2
Electrical Specifications T
C
= 25
°
C, Single Diode
[4]
Maximum
Forward
Voltage
V
F
(V) @
I
F
(mA)
Maximum
Reverse
Leakage
I
R
(nA) @ Capacitance Resistance
V
R
(V)
C
T
(pF)
Minimum
Breakdown
Voltage
V
BR
(V)
Maximum
Forward
Voltage
V
F
(mV)
Typical
Dynamic
Part
Number
HSMS
[5]
Package
Marking
Code
Maximum
Lead
Code
Configuration
R
D
(
)
[6]
2810
2812
2813
2814
2815
2817
2818
281B
281C
281E
281F
281K
B0
[3]
B2
[3]
B3
[3]
B4
[3]
B5
[3]
B7
[3]
B8
[3]
B0
[7]
B2
[7]
B3
[7]
B4
[7]
BK
[7]
0
2
3
4
5
7
8
B
C
E
F
K
Single
Series
Common Anode
Common Cathode
Unconnected Pair
Ring Quad
[5]
Bridge Quad
[5]
Single
Series
Common Anode
Common Cathode
High Isolation
Unconnected Pair
Unconnected Trio
20
400
1.0
35
200
15
1.2
15
281L
BL
[7]
L
Test Conditions
I
R
= 10
μ
A
I
F
= 1 mA
V
F
= 0 V
f = 1 MHz
I
F
= 5 mA
Notes:
1.
V
F
for diodes in pairs and quads in 15 mV maximum at 1 mA.
2.
C
TO
for diodes in pairs and quads is 0.2 pF maximum.
3. Package marking code is in white.
4. Effective Carrier Lifetime (
τ
) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA.
5. See section titled
“
Quad Capacitance.
”
6. R
D
= R
S
+ 5.2
at 25
°
C and I
f
= 5 mA.
7. Package marking code is laser marked.
Absolute Maximum Ratings
[1]
T
C
= 25
°
C
Symbol
Parameter
I
f
Forward Current (1
μ
s Pulse)
P
IV
Peak Inverse Voltage
T
j
Junction Temperature
T
stg
Storage Temperature
θ
jc
Thermal Resistance
[2]
Unit
Amp
V
°
C
°
C
°
C/W
SOT-23/SOT-143
1
Same as V
BR
150
-65 to 150
500
SOT-323/SOT-363
1
Same as V
BR
150
-65 to 150
150
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the device.
2. T
C
= +25
°
C, where T
C
is defined to be the temperature at the package pins where contact is made to the circuit board.
ESD WARNING:
Handling Precautions Should Be Taken To Avoid Static Discharge.
相關PDF資料 |
PDF描述 |
|---|---|
| HSMS-281L-BLK | Surface Mount RF Schottky Barrier Diodes |
| HSMS-281L-TR1 | Surface Mount RF Schottky Barrier Diodes |
| HSMS-281L-TR2 | Surface Mount RF Schottky Barrier Diodes |
| HSMS-281X | Surface Mount RF Schottky Barrier Diodes |
| HSMS-281K | Surface Mount RF Schottky Barrier Diodes(表貼型射頻肖特基勢壘二極管) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HSMS281K-TR2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:ARRAY OF INDEPENDENT DIODES|TSOP |
| HSMS-281K-TR2G | 功能描述:肖特基二極管與整流器 20 VBR 1.2 pF RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| HSMS-281L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Surface Mount RF Schottky Diodes in SOT-363 (SC-70. 6 Lead) (128K in pdf) |
| HSMS281LBLK | 制造商:Agilent Technologies 功能描述: |
| HSMS-281L-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Surface Mount RF Schottky Barrier Diodes |
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