參數(shù)資料
型號(hào): HSMS-281C
英文描述: Surface Mount RF Schottky Barrier Diodes(表貼型射頻肖特基勢壘二極管)
中文描述: 表面貼裝射頻肖特基二極管(表貼型射頻肖特基勢壘二極管)
文件頁數(shù): 4/8頁
文件大?。?/td> 72K
代理商: HSMS-281C
4
Typical Performance, T
C
= 25
°
C (unless otherwise noted), Single Diode
Figure 1. Forward Current vs.
Forward Voltage at Temperatures.
0
0.1
0.3
0.2
0.5 0.6
0.4
0.8
0.7
I
F
V
F
– FORWARD VOLTAGE (V)
0.01
10
1
0.1
100
T
A
= +125
°
C
T
A
= +75
°
C
T
A
= +25
°
C
T
A
= –25
°
C
Figure 2. Reverse Current vs.
Reverse Voltage at Temperatures.
0
5
15
I
R
V
R
– REVERSE VOLTAGE (V)
10
1
1000
100
10
100,000
10,000
T
A
= +125
°
C
T
A
= +75
°
C
T
A
= +25
°
C
Figure 3. Dynamic Resistance vs.
Forward Current.
0.1
1
100
R
D
)
I
F
– FORWARD CURRENT (mA)
10
1
10
1000
100
Figure 4. Total Capacitance vs.
Reverse Voltage.
0
2
6
4
10
12
8
16
14
C
T
V
R
– REVERSE VOLTAGE (V)
0
0.75
0.50
0.25
1.25
1
V
F
- FORWARD VOLTAGE (V)
Figure 5. Typical V
f
Match, Pairs and
Quads.
30
10
1
0.3
30
10
1
0.3
I
F
V
F
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
F
(Left Scale)
V
F
(Right Scale)
相關(guān)PDF資料
PDF描述
HSMS-281E Surface Mount RF Schottky Barrier Diodes(表貼型射頻肖特基勢壘二極管)
HSMS-281F Surface Mount RF Schottky Barrier Diodes(表貼型射頻肖特基勢壘二極管)
HSMS-281L Surface Mount RF Schottky Barrier Diodes(表貼型射頻肖特基勢壘二極管)
HSMS-2822-BLK Surface Mount RF Schottky Barrier Diodes
HSMS-2822-TR1 Surface Mount RF Schottky Barrier Diodes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HSMS-281C-BLK 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Surface Mount RF Schottky Barrier Diodes
HSMS-281C-BLKG 功能描述:肖特基二極管與整流器 20 VBR 1.2 pF RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
HSMS-281C-BLKG 制造商:Avago Technologies 功能描述:Diode
HSMS-281C-G 制造商:Avago Technologies 功能描述:HSMS-281C-G
HSMS-281C-TR1 制造商:Hewlett Packard Co 功能描述: