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參數資料
| 型號： | HSMS-280F |
| 英文描述： | Surface Mount RF Schottky Barrier Diodes(表貼型射頻肖特基勢壘二極管) |
| 中文描述： | 表面貼裝射頻肖特基二極管（表貼型射頻肖特基勢壘二極管） |
| 文件頁數： | 2/8頁 |
| 文件大小： | 74K |
| 代理商： | HSMS-280F |
2
Electrical Specifications T
A
= 25
°
C, Single Diode
[4]
Maximum
Forward
Voltage
V
F
(V) @
I
F
(mA)
Maximum
Reverse
Leakage
I
R
(nA) @ Capacitance Resistance
V
R
( V)
C
T
(pF)
Minimum
Breakdown
Voltage
V
BR
( V)
Maximum
Forward
Voltage
V
F
( mV)
Typical
Dynamic
Part
Number
HSMS
[5]
Package
Marking
Code
Maximum
Lead
Code
Configuration
R
D
(
)
[6]
2800
2802
2803
2804
2805
2807
2808
280B
280C
280E
280F
280K
A0
[3]
A2
[3]
A3
[3]
A4
[3]
A5
[3]
A7
[3]
A8
[3]
A0
[7]
A2
[7]
A3
[7]
A4
[7]
AK
[7]
0
2
3
4
5
7
8
B
C
E
F
K
Single
Series
Common Anode
Common Cathode
Unconnected Pair
Ring Quad
[5]
Bridge Quad
[5]
Single
Series
Common Anode
Common Cathode
High Isolation
Unconnected Pair
Unconnected Trio
Common Cathode Quad
Common Anode Quad
Bridge Quad
Ring Quad
70
400
1.0
15
200
50
2.0
35
280L
280M
280N
280P
280R
AL
[7]
H
[7]
N
[7]
AP
[7]
O
[7]
L
M
N
P
R
Test Conditions
I
R
= 10
μ
A
I
F
= 1 mA
V
F
= 0 V
f = 1 MHz
I
F
= 5 mA
Notes:
1.
V
F
for diodes in pairs and quads in 15 mV maximum at 1 mA.
2.
C
for diodes in pairs and quads is 0.2 pF maximum.
3. Package marking code is in white.
4. Effective Carrier Lifetime (
τ
) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA.
5. See section titled “Quad Capacitance.”
6. R
= R
+ 5.2
at 25
°
C and I
= 5 mA.
7. Package marking code is laser marked.
Absolute Maximum Ratings
[1]
T
C
= 25
°
C
Symbol
Parameter
I
f
Forward Current (1
μ
s Pulse)
P
IV
Peak Inverse Voltage
T
j
Junction Temperature
T
stg
Storage Temperature
θ
jc
Thermal Resistance
[2]
Unit
Amp
V
°
C
°
C
°
C/W
SOT-23/SOT-143
1
Same as V
BR
150
-65 to 150
500
SOT-323/SOT-363
1
Same as V
BR
150
-65 to 150
150
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the device.
2. T
C
= +25
°
C, where T
C
is defined to be the temperature at the package pins where contact is made to the circuit board.
Notes:
1. Package marking provides
orientation and identification.
2. See “Electrical Specifications” for
appropriate package marking.
Pin Connections and Package Marking, SOT-363
G
1
2
3
6
5
4
E SD WARNING:
Handling Precautions Should Be Taken
To Avoid Static Discharge.
相關PDF資料 |
PDF描述 |
|---|---|
| HSMS-280K | Surface Mount RF Schottky Barrier Diodes(表貼型射頻肖特基勢壘二極管) |
| HSMS-280L | Surface Mount RF Schottky Barrier Diodes(表貼型射頻肖特基勢壘二極管) |
| HSMS-280M | Surface Mount RF Schottky Barrier Diodes(表貼型射頻肖特基勢壘二極管) |
| HSMS-280N | Surface Mount RF Schottky Barrier Diodes(表貼型射頻肖特基勢壘二極管) |
| HSMS-280P | Surface Mount RF Schottky Barrier Diodes(表貼型射頻肖特基勢壘二極管) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HSMS-280F-BLKG | 功能描述:肖特基二極管與整流器 70 VBR 2 pF RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| HSMS-280F-TR1G | 功能描述:肖特基二極管與整流器 70 VBR 2 pF RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| HSMS-280F-TR2G | 功能描述:肖特基二極管與整流器 70 VBR 2 pF RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| HSMS-280K | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Low reverse leakage Schottky diode |
| HSMS280K-BLK | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:ARRAY OF INDEPENDENT DIODES|TSOP |
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